Powerex full-SiC MOSFET module

As a result of commercial development, based on advanced work with Cree, Inc. and the United States Air Force Research Laboratory (AFRL), Powerex is now offering two new silicon carbide (SiC) MOSFET modules (QJD1210006 and QJD1210007) that can operate at temperatures well beyond those possible with silicon IGBT-based modules.

Description:
As a result of commercial development, based on advanced work with Cree, Inc. and the United States Air Force Research Laboratory (AFRL), Powerex is now offering two new silicon carbide (SiC) MOSFET modules (QJD1210006 and QJD1210007) that can operate at temperatures well beyond those possible with silicon IGBT-based modules. When compared to a silicon IGBT module of equal rating (operating at a junction temperature of 150°C) the SiC MOSFET-based module has 38 percent lower conduction losses and 60 percent lower switching losses for a total power-loss reduction of 54 percent when operated at 20 kHz.

Offering an innovative package design, these modules are constructed in half-bridge configuration and feature 100A of SiC MOSFET per switch with two switches per model. Both styles feature all silicon carbide Schottky diodes for reverse recovery. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Product Ratings and Characteristics:
Rated at 100A/1200V, the QJD1210006 and QJD1210007 feature:
• Increased Junction Temperatures: -40 to +200°C
• All Silicon Carbide Chips
• Industry Leading RDS(on)
• High Speed Switching
• Low Switching Losses
• Low Capacitance
• Low Drive Requirement
• 2 Versions of Sic Schottky Free Wheeling Diode (50A for QJD1210006; 100A for QJD1210007)
• High Power Density
• Isolated Copper Baseplate

Applications:
Designed for power systems requiring both low conduction and switching losses, these all SiC MOSFET devices enhance applications which require high efficiency, high frequency and/or high temperature.