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Jun 3rd, 2014
A new 600V GaAs power devices by Clifton GmbH
Clifton GmbH unveiled a unique epitaxy (epi) technology to produce high-voltage Gallium Arsenide (GaAs) semiconductor material for diodes, transistors and intelligent power modules.
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The new GaAs devices offer higher performances, more efficiency and reliability in smaller and lighter devices; all at lower manufacturing costs/prices compared to SiC and GaN products. The company's initial product is a 600V 15A PIN diode; and within 2 month, the company will add a 1200V device. The 600V device is offered as a 3.1mm chip for packaging into modules (such as those produced by Clifton's partner, Powersem GmbH) and in a TO247-2 package. Target applications for these PIN diodes include high-power switching power supplies, power factor correction circuits, solar inverters and uninterruptible power supplies.

“We expect to offer our GaAs devices for half the cost of comparable GaN devices,” commented Dr. Gerhard Bolenz, Clifton’s CFO. “We have plans to ramp up to 6-inch epi over the next 12 months that will allow us to drive costs and prices down for our high-power and high-performance devices,” he concluded.


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