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Jun 24th, 2013
 
First yellow LEDs from nitride semiconductor MQWs on silicon
 
Hong Kong University of Science and Technology (HKUST) has developed silicon substrate growth of high-performance nitride semiconductor light-emitting diodes (LEDs) in the green and yellow bands [Xinbo Zou et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, published online 29 May 2013].
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The researchers claim the 565nm yellow LEDs as the first multi-quantum well (MQW) devices produced on silicon.

Producing longer-wavelength nitride semiconductor LEDs is challenging due to the difficulty of producing good-quality indium gallium nitride (InGaN) with higher indium concentration. Although growth on silicon is well established in nitride semiconductor transistor development, it is only fairly recently that similar growth methods have been applied to LED device material.

For more information, please refer to this link: http://www.semiconductor-today.com/news_items/2013/JUN/HKUST_180613.html


 
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