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Home  > POWER ELECTRONICS
  > POWER ELECTRONICS
 
  >  TOP STORY
300-millimeter thin-wafer production by Infineon completes qualification
Infineon Technologies AG has achieved a major breakthrough in the manufacturing of power semiconductors on 300-millimeter thin wafers. In February, the company received the first customer go-aheads for products of the CoolMOS™ family produced by the 300-millimeter line at the Villach (Austria)...

 
  >  ANALYSIS
IGBT producers adapt to vibrant market
Looking across the IGBT manufacturing landscape, perhaps the most notable thing about the companies inhabiting it is that
they are very different beasts. True, they share a common trait, elegantly combining characteristics of both MOSFETs and bipolar transistors in IGBTs that surpass both these device types across many switching applications. But different products inhabit very specific ...

Source: Power Dev' - January 2013 - Powered by Yole Développement

 
  >  INTERVIEW
Raytheon rides the wave of SiC’s efficiency
The company’s recently-opened £3.5 million 4-inch SiC foundry in Glenrothes, UK, will produce devices for both new entrants and established players, explain Paul D’Arcy, Business Unit Manager for Semiconductors, and Ewan Ramsay, Principal Engineer....
 
  >  REVERSE ENGINEERING
Process models unmask power device costs
System Plus Consulting can use physical samples to reveal critical information about device manufacturing methods, says Michel Allain, the company’s general manager....

Source: Power Dev' - April 2013 - Powered by Yole Développement
 
  >  PRESENTATION
Impact of EV/HEV on Power electronics technologies and supply-chain
Feel free to download Alexandre Avron's presentation held at Car-Ele 2013 ...
 
 
  >  TECHNOLOGY MAGAZINE
 
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  >  LATEST REPORT
IGBT Markets and Application Trends
IGBT application growth will lead the market to $6B+ by 2018...
 
  >  NEWS

May 24th 2013
Since the introduction of this next generation thin wafer IGBT (Insulated Gate Bipolar ...

May 24th 2013
The joint venture will focus on delivering high voltage direct current (HVDC) projects ...

May 24th 2013
Designed for the main inverter of hybrid and electric vehicles (HEV), the new ...

May 23rd 2013
Yole Développement organized its Power Electronics Market Briefing "IGBT ...

May 18th 2013
The modules, which use schottky-barrier diodes (SBD) made with SiC, are expected to ...

May 18th 2013
Funding commitments are spread across five Federal agencies: Defense, Energy, Commerce,...

May 18th 2013
The high-efficiency PMI (Plastic case Module IEGT) will help designers to save energy, ...

May 18th 2013
Engineered for optimum efficiency and availability, the three-phase, transformerless ...

May 18th 2013
When replacing a silicon module with equivalent ratings, Cree’s six-pack module ...

May 18th 2013
The new generation Field Stop II (FSII) devices being launched at PCIM improve ...

May 18th 2013
Transphorm Inc. announces the implementation of a high efficiency off-line 1 kW 48 Vdc ...

May 6th 2013
Infineon Technologies expands its High Voltage portfolio with CoolMOS™ C7, ...

May 6th 2013
The RC’s dense carbon slug element handles high energy surges much better than ...

May 2nd 2013
Using the EconoPACK™ + of the new D Series, customers were able to see for ...

May 2nd 2013
Microsemi Corporation announced the release of a new family of radiation-hardened ...


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