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Home  > POWER ELECTRONICS
  > POWER ELECTRONICS
 
  >  TOP STORY
Efficient Power Conversion Corp. announces 40 to 200V enhancement mode GaN power transistors
Spanning a range of 40 to 200V, and 4 to 100mΩ, these power transistors are said to demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC states that its technology produces devices that are smaller than similar resistance silicon devices and ...
 
 
  >  ANALYSIS
Status of the SiC power devices market: If only we had a switch...
With the recent introduction of 4" diameter SiC material coupled with the ZMP® (Zero MicroPipe) technology acquired from IntrinSiC, US company Cree is now marketing a product able to fit with the power devices makers main requirements. However, few of them have already entered in the production phase, and if we except Cree itself and Infineon, no other player is commercially active on this ...
 
 
  >  PRESENTATION
SiC and GaN Power Electronics APEC 09
The Power Electronics next-gen materials ...
 
 
  >  LATEST REPORT
High voltage power electronics market and technology trends
Focus on application segments over-1.7kV ...
 
 
  >  EVENTS
CIPS 2010
...
 
 
  >  NEWS
March 9th 2010
With a flexible architecture that supports 40W/60W/100W incandescent bulb replacement ...

March 9th 2010
According to the companies, smart chargers will hasten acceptance of plug-in cars by ...

March 4th 2010
According to the company, the demand for smart energy technology continues to grow ...

March 1st 2010
Today’s battery chargers, DC-DC converters or motor drivers used in hybrid and ...

February 24th 2010
The iP2010 and iP2011 family of devices is designed for multiphase and point-of-load ...

February 22nd 2010
The technology, which works with a single PV inverter, achieves the maximum power point...

February 19th 2010
VENUS power MOSFETs exhibit outstanding high temperature performances. At 225°C, ...

February 16th 2010
These new solutions are designed for the robust needs of high voltage, energy ...

February 4th 2010
C-MAC MicroTechnology announced it has extended its agreement with CISSOID to integrate...

February 4th 2010
In the home, a key standard for connecting devices to a smart meter will not be ...

February 3rd 2010
The new device has a voltage rating of 2.5kV and a current rating of 2250A. The compact...

February 1st 2010
Mitsubishi Electric claims to have developed the world’s highest-capacity IGBT ...

January 27th 2010
The new SiHP22N60S (TO-220), SiHF22N60S (TO-220 FULLPAK), SiHG22N60S (TO-247), and ...

January 26th 2010
NIST Director Patrick Gallagher announced the publication of the NIST Framework and ...

January 20th 2010
The new 600V IGBT RC-Drives family (RC for Reverse-Conducting) enables more ...


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