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Transphorm and Fujitsu semiconductor announce the start of mass production of Transphorm’s gan power devices

Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced that Fujitsu Semiconductor group’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching applications.

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New Vishay Intertechnology IHLP® Inductors in 2020 case size offer high-temperature operation to +155 °C

Vishay Intertechnology, Inc. (NYSE: VSH) today launched two new IHLP® low-profile, high-current inductors in the 2020 case size with high operating temperatures to +155 °C.

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Efficient power conversion (EPC) introduces monolithic Gallium Nitride power transistor half bridge enabling over 97% system efficiency for a 48 V to 12 V buck converter at 20 A output

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

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Reducing gate leakage and current collapse in GaN HEMTs on silicon

The University of Sheffield and the University of Cambridge in the UK have developed an optimized passivation for gallium nitride (GaN) high-electron-mobility transistors on silicon substrates (HEMTs) using sulfuric acid (H2SO4) treatment and silicon nitride (SiN) deposition [Z. H. Zaidi et al, J. Appl. Phys., vol116, p244501, 2014].

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ZBB Energy to commission breakthrough hybrid energy storage system for multi-tenant building in Hawaii

ZBB Energy Corporation (NYSE MKT: ZBB), a leading developer of innovative energy management systems solutions serving the utility and commercial and industrial (C&I) building markets, announced they will provide an integrated hybrid battery system utilizing ZBB's EnerStore® V3.3 zinc bromide flow batteries and a lithium ion energy storage module to provide elevator and common area back-up power for a multi-tenant residential building in Hawaii.

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Efficient Power Conversion (EPC) introduces enhancement Mode 450 V Gallium Nitride power transistors for high frequency applications

EPC2027 eGaN® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

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