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Developed for 1200 V solar three-phase inverter applications, they enable engineers to ...




The new 6.5kV device is asymmetrical blocking with a fully rated anti-parallel diode ...




The new ABB inverter station is a compact and robust solution that houses all the ...




In three halls and over an area of approximately 20,000 square ...




How new device technologies will drive power packaging? A push for improvement and a ...




The IX2204 features two high current outputs, each capable of sourcing 2A and sinking ...




The VOW3120-X017T features a minimum 10 mm clearance and external creepage distance. In...




This new DTMOS IV-H series consists of the TK31N60X, TK39N60X and TK62N60X, and is ...




The NexFETs include 40 V, 60 V, 80 V and 100 V N-channel devices that provide good ...




Leveraging ST’s advanced Trench-Gate Field-Stop High-Speed technology, the HB ...




Power Integrations (Nasdaq:...




IGBT driver manufacturer CT-Concept Technologie GmbH, a Power Integrations company, has...




GaN-on-Si LED is already adopted by some LED manufacturers, but ...




Transphorm Inc. announced at APEC 2014 the industry’s first 600V GaN (Gallium ...




ST is among the first companies to produce this type of device, a high-voltage silicon ...





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