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The purchase price was approximately EUR 17 million or approximately $23 million.




ABB, the leading power and automation technology group, announced its intention to ...




Combining extremely fast and soft recovery characteristics with low forward voltage ...




The new devices leverage IR’s field stop trench ultra-thin wafer technology that ...




The wide-bandgap semiconductors, GaN and SiC, are at a crossroads on their voyage to ...




Yole Développement announces its IGBT Markets and Application Trend report. Yole...




In its latest technology & market analysis, titled “SiC Market”, Yole ...




Since the introduction of this next generation thin wafer IGBT (Insulated Gate Bipolar ...




The joint venture will focus on delivering high voltage direct current (HVDC) projects ...




Designed for the main inverter of hybrid and electric vehicles (HEV), the new ...




Yole Développement organized its Power Electronics Market Briefing "IGBT ...




The modules, which use schottky-barrier diodes (SBD) made with SiC, are expected to ...




Funding commitments are spread across five Federal agencies: Defense, Energy, Commerce,...




The high-efficiency PMI (Plastic case Module IEGT) will help designers to save energy, ...




Engineered for optimum efficiency and availability, the three-phase, transformerless ...





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