Yole Développement is pleased to publish a reverse engineering  & costing report on the CMF20120 silicon carbide (SiC) power transistor from CREE. This 1200V MOSFET offers a very low on-resistance (80mΩ).

Based on a complete teardown process, the report provides an estimation of the production cost as well as the selling price of the CMF20120.

This reverse costing report of the first SiC MOSFET transistor contains:

Benefits

• Physical Analysis of the Device
• Step by Step Reconstruction of the Process Flow
• Cost of Manufacturing & Estimation of Selling Price

Overview / Introduction

–         Introduction

–         Reverse Costing Methodology

Physical Analysis

–         Physical Analysis Methodology

–         Package

–         Die Overview

–         Guard Ring

–         Passivation

–         Metal Layer

–         MOSFET Gate

–         SIMS Analysis

–         Substrate and Epitaxy

–         Back Side

–         Thickness Synthesis

–         MOSFET Structure &Characteristics

–          

Manufacturing Process Flow

–         SiC Process Flow

–         Description of the Wafer Fabrication Unit

Wafer Cost Analysis

–         Wafer Cost data

–         Yields Explanation

–         MOSFET  Unprobed Wafer Cost

–         Wafer Cost per process steps

–         Equipment Cost per Family

–         Material Cost per Family

–         Die per Wafer and Probe Test

–         Probe Test

–         Dicing and Package

–         Final Test Cost 

–         MOSFET Die Cost

–         Yields synthesis

Estimated Manufacturer Price Analysis

–         Supply Chain Analysis

–         Manufacturer ratios        

–         Estimated manufacturer Price

Conclusion