GaN challenges a $14.5 silicon power device market !!
This $14.5B Total Accessible Market is the Si-based power discretes and ICs business as it is forecasted for 2010. Today the largest applications in potential revenue for GaN electronics remain Power Supply PFC, UPS and Motor AC drives. Tomorrow, EV/HEV and inverters for PV installations could take the lead exhibiting higher CAGR (>15%/year)
Low-Voltage applications (< 1.2kV) will probably represent the most attractive segments for GaN power devices, however the competition with SiC technology could be severe are both are exhibiting similar added values at system level (see attached file). Indeed, in the 600-1200 V range, promising GaN technologies might threaten SiC.
GaN-on Silicon is becoming the mainstream technology for Nitride power electronics. It benefits from all the Nitride LED industry knowledge as well as the cost effectiveness advantage. Today, few companies have already released devices on the market place: IR having just launched a POL integrated GaN-based IC, MicroGaN with its GaN rectifier and HFET transistor and EPC now marketing that GaN transistor.
Physical Analysis of the Device
Step by Step Reconstruction of the Process Flow
Cost of Manufacturing and Estimation of Selling Price
Yole Développement is pleased to publish a reverse costing report on the enhancement mode Gallium Nitride (GaN) power transistors from EFFICIENT POWER CONVERSION Corp.
A large variety of analytical techniques including, electron microscopy, EDX, Ramanand FTIR spectroscopy will be used to probe the insides of these devices and reveal details of their fabrication technology, including interconnect, metallization, isolation and layout.
Based on this teardown process, the report will provide an estimation of the production cost as well as the selling price of several devices from the EPC 10 family.
GaN- on Silicon is becoming the mainstream technology for Nitride power electronics. It benefits from all the Nitride LED industry knowledge as well as the cost effectiveness advantage of silicon. GaN-on- Silicon HEMT transistors could be used as power MOSFET replacements in applications such as High Speed DCDC Conversion, Telecom Base Stations, Data Centres, LED Lighting…
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Get into the secret of EPC Corp GaN power transistors