Yole Développement is pleased to publish a reverse costing report on the new generation of GaN power transistors from EFFICIENT POWER CONVERSION Corp. Discover the change in the GaN transistor process.

Based on a complete teardown process, the report provides an estimation of the production cost as well as the selling price of the EPC2010 device, a 200V, 12A, 25mOhm transistor. 

This report provides a reverse costing of the POWER TRANSISTOR with:

•  Detailed photos
•  Material analysis
•  Manufacturing Process Flow
•  In-depth economical analysis
•  Manufacturing cost breakdown
•  Selling price estimation

Overview / Introduction……………………….…...………..…4

• Executive Summary
• Reverse Costing Methodology

2. Company Profil…………………………………….…...……7

• EPC Company Profile
• Product Identification

3. Physical Analysis………………………………...…….….15

• Transistor characteristics & markings
• Pads
• Bumps
• Devices Dimensions
• Contacts
• Cross section analysis
• Back end process
• Front end process
• Gate
• GaN Epitaxy
• Summary of process parameters
• Synthesis

4. Manufacturing Process Flow………………………………48

• GaN-Si Epitaxy process flow
• Transistor process flow
• Bumps process flow
• Description of the Wafer Fabrication Unit

5. Cost Analysis……………………………………………..…..59

• Main steps of economic analysis
• Epitaxy Cost
• Wafer Cost
• Breakdown per Step / Equipment / Consumable
• Supply Chain Analysis
• Probe Test Cost
• Bumps, Dicing and Final Test Cost   
• Component Manufacturing Cost
• Yields synthesis   

6. Estimated Manufacturer Price Analysis…………………87

• Manufacturer ratios   
• Estimated manufacturer Price

Conclusion………………………………………………………92