Super Junction Bipolar SiC Transistor
The first 1700V super junction NPN bipolar transistor from GeneSIC:
“Super-High” current gain bipolar transistor compatible with standard MOSFET/IGBT Drivers
The Super Junction Transistors SiC are targeted for power switching applications and offer a better power efficiency. The first generation GeneSIC transistor has several new features.
First, with a current density 4-5 times higher than a silicon transistor, this SIC transistor is a very interesting economical solution.
Second, the Ga08JT1700 is a super high current gain BJT, β=40. A low gate current is necessary to drive it. This is why a standard commercial IGBT/MOSFET driver can be used.
Third, the emitter and the collector regions are designed to reduce the minority carrier diffusion in order to obtain a high frequency.
Fourth, this transistor is designed for an operating temperature of 175°C maximum.
This report provides a reverse costing analysis with:
• Detailed photos & Material analysis
• SCM analysis
• Cost breakdown by process steps
1. Overview / Introduction
2. Companies Profile
3. GA08JT17-247 Characteristics
4. GA08JT17-247 Physical Analysis
Package Views & Dimensions
Die View, Dimensions & Marking
Substrate and Epitaxy Layers
SJT BJT Characteristics
5. Manufacturing Process Flow
GA08JT17 Epitaxy Unit
GA08JT17 Front end Unit
GA08JT17 Tests Unit
Transistor Process Flow
6. Cost Analysis
Synthesis of the cost analysis
GA08JT17 Epitaxy Cost
GA08JT17 Front-End Cost
GA08JT17 Wafer Cost
GA08JT17 Cost per process steps
GA08JT17 : Equipment Cost per Family
GA08JT17 : Material Cost per Family
Back-End : Probe and Final Test Cost
GA08JT17 -247 Cost & Price