Yole Developpement is pleased to publish a reverse costing report on the IPB60R280C6 silicon power transistor. This MOSFET is the new super-junction structure MOSFET from Infineon. This 600V MOSFET offers a lower RDS(ON) (280mΩ) than the theoretical limit of silicon and enables a reduction in power consumption.

Based on a complete teardown process, the report provides an estimation of the production cost as well as the objective selling price of the IPB60R280C6.

This reverse costing report contains:

• Detailed photos
• Material analysis
• Manufacturing process flow
• In-depth economical analysis
• Manufacturing cost breakdown
• Selling price estimation

Executive Summary       

Table of Contents       

Reverse Costing Methodology

1. Physical Analysis        6

• Physical Analysis Methodology
• Package
• Die Overview
• Source Area
• Guard Ring
• MOSFET Cell - SuperJunction
• MOSFET Cell
• Polysilicon Gate Contact
• Guard Ring
• Back Side (Drain)
• MOSFET Structure
• Multi-epitaxy

2. Manufacturing Process        30

• Process Flo
• Wafer Fabrication Unit   

   
3. Manufacturing Cost    37

• Wafer Cost data
• Yields Explanation
• MOSFET  Unprobed Wafer Cost
• Wafer Cost per process steps
• Equipment Cost per Family
• Material Cost per Family
• Die per Wafer and Probe Test
• Probe Test
• Dicing and Package
• Final Test Cost   
• MOSFET Die Cost
• Yields synthesis

4. Average Selling Price    55

• Definitions of Prices   
• Estimation of the Selling Price

Conclusion        59