Infineon has improved the epitaxy process with a direct impact on Rdson, 20% lower.
The CoolMOSTM C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100°C), the C7 is optimized for hard switching topologies such as Power Factor Correction, solar boost circuit applications.
The CoolMOSTM C7 offers a very low on-resistance (between 19mΩ and 225mΩ), and a fast switching speed, more than 100KHz. The C7 differs from the C6 via a new multi-epitaxy technology and an original contact solution. The C7 wafer cost is 10% higher than the C6 but the current density is 25% higher and the power losses 20% lower.
This reverse costing report provides an estimation of the production cost of the IPD65R225C7, a discrete CoolMOSTM transistor.
Complete teardown with:
Comparison of C7 vs. C6 gen.
Detailed photos and identification
Manufacturing process flow
In-depth economical analysis
Manufacturing cost breakdown
Selling price estimation
1. Overview / Introduction
Comparison of C6 and C7 generations
2. Companies Profile
3. IPD65R225C7 Characteristics
4. IPD65R225C7 Physical Analysis
Physical Analysis Methodology
Package Views & Dimensions
Die View, Dimensions & Marking
Gate Supply Line
Source and Gate
Substrate and Epitaxy Layers
5. Manufacturing Process Flow
MOSFET Front end Unit
MOSFET Tests Unit
Transistor Process Flow
6. Cost Analysis
Synthesis of the cost analysis
Main steps of economic analysis
MOSFET Epitaxy Cost
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