Yole Développement is pleased to publish the new version of the reverse costing report on the 6th generation of CSTBT from MITSUBISHI. SCM and SRP profiles has been added to provide more information on the location and concentrations of dopants.

Discover the first IGBT with 2 metals for the emitter. Based on a complete teardown process, the report provides an estimation of the production cost as well as the selling price of the CSTBT device and the CM450DY-24S, 1200V 450A, half-bridge IGBT module.

This report provides a reverse costing of the POWER TRANSISTOR and POWER MODULE with:

•  Detailed photos & Material analysis
•  Manufacturing Process Flow
•  SCM and SRP profiles
•  In-depth economical analysis
•  Manufacturing cost breakdown
•  Selling price estimation

• Executive Summary p1
• Hypothesis p 3       
• Table of contents p 4
• 1.Technology Analysis of the module p 6
  • Power Module Dimensions
  • Power Module Disassembly
  • Transistors and Diodes
  • Wire bondings
  • Cross-section
  • AIN Substrate
• 2. Technology Analysis - IGBT Die p 21       
  • IGBT Die Dimensions
  • About the cross-sections
  • Die Thickness & Gate Contact
  • IGBT Transistor Cross-sections
  • IGBT Transistor Structure
  • Mitsubishi Transistor Structure
  • Mitsubishi CSTBT 6th generation
  • Synthesis
• Technology Analysis - Diode Die p 45
• Manufacturing Process flow p51
  • IGBT Process Flow
  • Diode Process Flow
  • AMB Substrate Process Flow
  • Module Process Flow
• Cost Analysis p60
  • Economic Analysis Hypotheses
• 5.1 IGBT p67
  • Component Summary
  • Wafer Fabrication Unit
  • Back-End
    
  • Yield Summary
  • Unprobed Wafer Cost
  • Die Cost
• 5.2 Diode p 80
  
• 5.3 Module p 93
  • AMB Substrate Cost
  • Module Cost
  • Final Test Cost
  • Component Cost
• Selling Price Estimation p 104
  • Selling Price Estimation
  • Manufacturer Ratios
  • Manufacturer Price
• Glossary p108