Super junction MOSFET technologies and market
SJ MOSFET market will double to reach $890M in 2016
Infineon and ST Micro are sharing 90% of the market, leaving Vishay, Fairchild, Toshiba and all the new comers struggling for the remaining pieces (still $50M…). However, the market is being attacked by new comers: Fairchild & Toshiba in 2004, then Vishay in 2010, followed by Renesas, Fuji Electric, Alpha Omega Semiconductor, Hua-hong NEC and probably others very soon. This picture is to change as market size will nearly double within the next 5 years.
First CoolMOS® was released back in 1998 by Infineon. It broke what had been the “silicon limit” for key device performance parameters (RdsON per area), and competitors took time to develop and make their own solution commercially available, such as ST Micro who released its MDmesh® in 2000. While waiting for the performance improvements promised for a long time by compound semiconductor devices, system manufacturers keep pushing for improvements in Silicon devices at the lowest cost possible. SJ MOS is one of the solutions proposed today.
Shortage in 2010 opens doors for smaller players:
The SJ MOS market will experience a CAGR of approximately 13% for the next 5 years. However, in 2009 manufacturers slowed production because of the economic downturn and then 2010 was a year of shortage. SJ MOS production process is so proprietary and specific that it is difficult to outsource to foundries. This reduces the capability to meet the demand. Re-launching biggest player’s production left more room for smaller players; that gives them an opportunity in 2011 to take market shares.
New entrants, new devices, differing strategies and emerging applications:
Applications are also expanding. New inverter topologies are using SJ MOS in systems up to 10kW. The expected added value is cost, space and efficiency. There will be an impact on SJ MOS market, coming from this new structure. These new topologies will be the driver of SJ MOS power modules and we expect to see more and more SJ MOS in inverters. They will also take market share to IGBT in 600V-1200V range. They will be preferred for high frequency needs.
SJ MOS technology is also increasing in voltage breakdown. ST Micro is releasing 1200V MDmesh® and now targeting 1700V.On the other side, 900V CoolMOS® from Infineon is looking for a market at the moment. Players have very different strategies, targeting very different markets. Some envision that SJ MOS will replace IGBT’s in selected 1200V applications; others prefer to focus on cost to make their solution replace Planar MOSFETs. Among the SJ MOS players, a large portion also develops solutions for the next generation of power semiconductors, GaN and SiC. Super junction will be the Silicon technology that will make the transition to compound materials. It will make Silicon last more than expected.
Multiple epitaxy vs. deep trench: the two competing technologies?
SJ MOS technology is also balancing between multiple epitaxy, the historical structure developed by Infineon, and deep trench, the newest structure. Cost will be the main issue to tackle, to make one technology available and used in more and more solutions. Some expect that deep trench will be the best. It allows fast processing through deep reactive ion etching, with higher yield and smaller dies. There are still difficulties and setting up the process is prohibitive. On its side, multiple epitaxy technology stays expensive, with its repeated lithography steps, but process is now well known. Some manufacturers can reach high yields with older devices (+85%). Yield is difficult to improve thus players are looking forward to smaller dies.
Integrators will remain technology agnostic. The market is and will be cost-driven. Because of the development costs involved and the need of return on investment, we envision these two structures are going to live jointly for a few years…
Key features of the report:
- Market trends (ASP, Units, M$) and figures with detailed breakdown:
- By players
- By application
- Multiple epitaxies and deep trench technology revealed and explained
- Description and positioning of the technology in terms of applications
- Profiling of the players and analysis of their strategy
- Profiling of the new entrants and analysis of their status
- Analysis of the trends and evolutions in terms of technology and applications
Who should buy this report?
- Power semiconductor manufacturers:
- Identify today’s players, technologies and strategy
- Benchmark SJ MOS technology versus of other available power switches
- Get the exact picture of SJ MOS market to take the good decisions.
- SJ MOS manufacturers:
- Get the market metrics required for your strategy
- Identify your opportunities in emerging applications
- Benchmark your competitor’s technology and strategy
- Equipment manufacturers:
- Identify new business opportunities and prospects: deep trench, implantation…
- Power module makers:
- Evaluate the availability and benefits of integrating SJ MOS, regarding your own strategy
- Benchmark the different manufacturers and make the best choice in the future.
- Power converter manufacturers:
- Understand the technology inside SJ MOS, and benchmark your suppliers of discrete devices
- Understand the market of SJ MOS to anticipate on your supply-chain evolution.
Companies cited in the report:
Alpha omega semiconductor, Danfoss, Deboy, Denso, EnPhase, EPC Corp, Fairchild, Freescale, Fuji electric, Hitachi, Hua hong Nec, Infineon, Internation rectifier, Ixys, Laas lab, Micro GaN, Microsemi, Mitsubishi, NEC, NXP, ON Semi, Panasonic, Philips, Powdec, Powersem, Renesas, Rohm, Sanken, Schneider Electric, Shindengen, ST Microelectronics, Toshiba, Toyota, Vincotech, Vishay…
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Super Junction MOSFET technologies and market