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CREE 1700V SiC Module - First 1700V SiC MOSFET with Z-Rec SiC Diode

cree cas300m17bm2 icone
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Icone CREE CAS300M17BM2 Flyer.pdf Adobe Acrobat StandardA specific SiC epitaxy with a dual layers structure for a very low Rdson of 8mΩ.

The CAS300M17BM2 from CREE Semiconductor is a 2-transistor  power module with a breakdown voltage of 1700V for a current of 225A (90°C), an ultra low on-resistance (8mΩ), a fast switching speed and a fast reverse recovery.

The 1700V module  integrates twelve 2nd generation high-voltage SiC power MOSFET dies with a current of 50A (90°C) for 29sq mm.

Twelve Z-Rec diodes of 36 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode.

The  1700V MOSFET has a new gate design, a more sophisticated ohmic contact and an optimized technology to reduce the epitaxy layer thickness. A comparison with a 1200V SiC module is done in the report for the MOSFET, Diode and Module.

Based on a complete teardown analysis, the report provides an estimation of the production cost of the CAS300M17BM2 package, SiC MOSFET Transistor and Schottky Barrier Diode.


  • Detailed photos and identification
  • Comparison between the 1700V and 1200V power module, MOSFET, Diode
  • Manufacturing process flow  of MOSFET and Diode
  • In-depth economical analysis
  • Manufacturing cost breakdown
  • Selling price estimation

CREE CAS300M17BM2 image

Table of contents

1. Overview / Introduction

2. Companies Profile    

  -  CREE Profile

3. CAS120M12BM2 Characteristics

  -  CAS300M17BM2 Characteristics

4. CAS120M12BM2 Physical Analysis

  -  Physical Analysis Methodology
  -  Package Views & Dimensions

  -  Die View, Dimensions & Marking
  -  Guard Ring
  -  Cross-Section Gate
  -  Substrate and Epitaxy Layers, Backside
  -  MOSFET Characteristics

  -  Die View, Dimensions & Marking
  -  Guard Ring, Cross-Section
  -  Substrate and Epitaxy Layers
  -  Backside
  -  Diode Characteristics

Comparison 1700V and 1200V
  -  Module, MOSFET, Diode
5. Manufacturing Process Flow
  -  Global Overview
  -  MOSFET Front end Unit, Tests Unit
  -  Transistor Process Flow
  -  Diode Front end Unit, Process Flow
  -  Diode Process Flow
  -  Power Module Process Flow

6. Cost Analysis

  -  Synthesis of the cost analysis
  -  Main steps of economic analysis

  -  Yields Hypotheses
  -  MOSFET Epitaxy Cost
  -  MOSFET Front-End Cost
  -  MOSFET Wafer Cost
  -  MOSFET Cost per process steps
  -  MOSFET : Back-End : Probe and


  -  Package & Final Test

7. Price Estimation





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