New Receiver & Transmitter components with a SiGe:C HBT technology from Infineon
The new integrated Radar and Camera (RACam) 76GHz automotive radar from Delphi integrates receiver and transmitter components from Infineon. These components use the latest SiGe:C HBT technology.
The two bare dies RF component are developed and manufactured by Infineon. The two chips are integrated in the RF board with specific thermal management. The dies have wire bonding and are directly connected to microstrip line transmission which lead the signal to antenna via a specific way through the PCB. The RF transistors are the newest generation SiGe:C HBT dies from Infineon. The circuits use advanced insulation structure and modern copper metal layers.
The report includes a complete physical analysis of the dies, with details on technical choices regarding the design and the manufacturing process. The SiGe HBT are equally analyzed.
Infineon offer several RASIC with different package (bare die, eWLB). in order to understand the choice made by Delphi, the RF function and design are compared with the Infineon RRN7745P and RTN7735P (eWLB packaging) found in the Bosch MRR1Plus automotive radar.
Overview / Introduction
Infineon Company Profile
Radar system> Integration of the die> System Comparison
Die> Die View & Dimensions> Main Blocks Identification> Die Marking> Die Process> Die Comparison> Die Integration> Die Cross-Section
Hypotheses> Component Summary> Front-End Summary> Wafer Fabrication Unit> Back-End: Probe Test, Backgrinding & Dicing> Back-End: Final Test
Cost Analysis> Yields Synthesis> Unprobed Wafer Cost> Die Cost> Final Test Cost> Component Cost
Estimated Price Analysis
Infineon Financial ResultsComponent Selling Price
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Manufacturing Cost Analysis
Selling Price Estimation
Comparison with Infineon RRN7745 & RTN7735 eWLB