Littelfuse and Monolith Semiconductors, in collaboration with X-Fab, have released a 1st-generation, high-reliability MOSFET with the hope of making this silicon carbide product mainstream.
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 – 2020. This will increase to 40% from 2020 – 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1B in 2022. In the energy conversion sector, SiC devices have an actual value of $250M, which will increase by around 28% in 2022. The reason for this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages.
Littelfuse, Inc., a leader in circuit protection, recently introduced its first series of silicon carbide (SiC) MOSFETs. This is the latest addition to the company’s power semiconductor line, realized through a majority investment in Monolith Semiconductor Inc., a SiC technology development company.
The LSIC1MO120E0080, with a voltage rating of 1200V and ultra-low (80mΩ) on-resistance, is the first organically designed, developed, and manufactured SiC MOSFET to be released by this partnership, using all of X-Fab’s know-how and experience, along with its 150mm SiC production line in Lubbock.
Supported by a full component and package teardown, this report reveals Littelfuse’s innovative assets, which bring several advantages to the 1200V SiC MOSFET: most notably, superior gate-oxide reliability, switching performance, and conduction losses.
This report also details the complete bill of materials (BoM), die manufacturing, and packaging processes. Included too are an estimated manufacturing cost, a comparison with similar products from STMicroelectronics and CREE, and an estimated sales price of the Littelfuse component.