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1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison

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Yole 1200V SiC MOSFET vs Silicon IGBT Technology cost comparison Flyer.pdf Adobe Acrobat Standard

New SiC MOSFET technologies are trying to compete with well-established silicon IGBTs, but will they succeed?

The report provides an in-depth analysis of the latest innovations in 1200V power devices showing the differences between silicon field-stop, punch-through (PT) and carrier stored trench bipolar transistor IGBTs and planar and trench silicon carbide (SiC) MOSFETs from the technical and economic points of view.

It includes details on manufacturing processes and materials, packaging structures, component designs, die sizes, electrical performance, current density, and more.

SiC MOSFET vs Si IGBT System Plus ConsultingSilicon IGBT technology was first commercially released in 1986 with a PT technology and continues to improve and develop. SiC MOSFETs offer new capabilities, such as the possibility of working at higher frequencies and temperatures.

SiC MOSFETs are good candidates to enter the 1200V power device sector, but the high manufacturing cost and at improvement of silicon IGBTs will keep the latest models on the market and drive towards standardization and popularization of these devices.


SiC MOSFET vs Si IGBT wafer cost breakdown System Plus Consulting

To understand technological innovations in silicon IGBTs and SiC MOSFETs, we have opened and analyzed 16 devices from 7 different manufacturers: Infineon, STMicroelectronics, Fuji Electric, IXYS, Mitsubishi, Rohm, and Wolfspeed. The report includes detailed pictures of device structures and cost breakdown analyses of the manufacturing processes.

 SiC MOSFET vs Si IGBT overview System Plus Consulting


























Table of contents

Introduction and Market

> Executive summary
> Power electronics market
> Main players
> Analyzed devices


1200V Silicon IGBT

> Technology overview
> IGBT market and players
> 1200V Silicon IGBT performance
> Infineon
  - Infineon performance and cost structure
  - IHW40N120R3
  - IGC70T120T6RM
  - IGC99T120T8RL
> STMicroelectronics
  - STMicroelectronics performance and cost structure
  - STP16N65M5
> Fuji
  - Fuji performance and cost structure
  - FGW30N120HD
  - FGW40N120HD


SiC MOSFET vs Silicon IGBT Technology Comparison




































  - IXYS performance and cost structure
  - IXGP30N120B3
  - IXGK120N120A3
> Mitsubishi
  - Mitsubishi performance and cost structure
  - CM450DY-24S
> Silicon IGBT comparison



> Technology overview
> MOSFET performance
> Wolfspeed/Cree
  - Cree performance and cost structure
  - Cree evolution
  - SCH2080KE
  - BSM180D12P3C007
> Rohm
  - Rohm performance and cost structure
  - Rohm evolution
  - CMF20120
  - C2M0040120D
> STMicroelectronics
  - STMicroelectronics performance and cost structure
  - STC30N120
> SiC MOSFET comparison


About the authors


System Plus Consulting specializes in the cost analysis of electronics, from semiconductor devices to electronic systems.


Created more than 20 years ago, System Plus Consulting has developed a complete range of services, costing tools and reports to deliver in-depth production cost studies and estimate the objective selling price of a product.


System Plus Consulting engineers are experts in:

  • Integrated Circuits 
  • Power Devices & Modules 
  • MEMS & Sensors
  • Photonics 
  • LED 
  • Imaging 
  • Display 
  • Packaging 
  • Electronic Boards & Systems.

Through hundreds of analyses performed each year, System Plus Consulting offers deep added-value reports to help its customers understand their production processes and determine production costs. Based on System Plus Consulting’s results, manufacturers are able to compare their production costs to those of competitors.

System Plus Consulting is a sister company of Yole Développement.


More info at 
















































  • Detailed photos

  • Precise measurements

  • Material analysis

  • Manufacturing process flow

  • Supply chain evaluation

  • In-depth economic analysis

  • Manufacturing cost breakdown

  • SiC MOSFETs and IGBT comparison