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1200V Silicon IGBT vs SiC MOSFET Comparison 2018
Sep.2018

sp18383
4 990 €

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Description

SP18388 1200V Si IGBT vs SiC MOSFET Comparison 2018 flyer cover

Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.

 

Silicon (Si)-based IGBTs have been on the market for more than 30 years. The technology has quickly evolved, reducing the costs and improving performance at the same time. As Si devices approach their physical limits, wide-band-gap devices, in particular made from silicon carbide (SiC), have emerged on the market, offering better performance thanks to their intrinsic properties.

SiC MOSFETs and Si IGBTs are in competition in various applications in the 1200V range. As of 2018, the SiC MOSFET market is still small compared to that for Si IGBTs due to lack of maturity and high cost. However, market acceptance is increasing as the technology improves, costs fall and more device manufacturers enter the market.

 

SP18388 1200V Si IGBT vs SiC MOSFET Comparison 2018 image1 logo

 

In this report, System Plus Consulting presents an overview of the state of the art of 1200V Si IGBTs and SiC MOSFETs. We highlight the differences in design and manufacturing processes, and their impact on device size and production cost.

We have analysed different Si and SiC devices from Infineon, STMicro-electronics, Fuji, ON Semiconductor, Mitsubishi, Rohm, Wolfspeed and Littelfuse. The report includes detailed optical and Scanning Electron Microscope pictures of the transistor design, cross sections and epitaxy.

This report provides design information, an estimated production cost for every transistor and compares the different components available on the market.

 

  SP18388 1200V Si IGBT vs SiC MOSFET Comparison 2018 image2 logo SP18388 1200V Si IGBT vs SiC MOSFET Comparison 2018 image3 logo SP18388 1200V Si IGBT vs SiC MOSFET Comparison 2018 image4 logo

 

 

 

 

 

 

 

 

 

 

 

    

 

 

Table of contents

Overview/Introduction


> Executive Summary

> Reverse Costing Methodology

 

Technology and Market


 

 

Company Profile


 

 

Physical Analysis


> 1200V Si IGBT

- Infineon

+ IHW40N120R3

+ IGC99T120T8RL

+ AUIRG4PH50S

+ IRG7PH46UD-EP

- STMicroelectronics

+ STP16N65M5

+ STGWA40S120DF3

- Fuji

+ FGW40N120HD

- Littlefuse

+ IXGP30N120B3

+ IXGK120N120A3

+ IXDN75N120

- Mitsubishi

+ CM450DY-24S

 


 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

- ONSemiconductors

+ FGH40N120ANTU

+ NGTB25N120FL2WAG

> 1200V SiC MOSFET

- Wolfspeed

+ CMF20120

+ C2M0080120D

+ C2M0025120D

- Rohm

+ SCH2080KE

+ BSM180D12P3C007

- STMicroelectronics

+ SCT30N120

- Littlefuse

+ LSIC1MO120E0080

- Infineon

+ DF11MR12W1M1_B11

 

 

Transistor Manufacturing Processor


 

 

Cost and Price Analysis


> Summary of the Cost Analysis

> Yields Explanation and Hypotheses

> 1200V Si

> IGBT1200V SiC MOSFE

 

 

Feedback


   

System Plus Consulting Services


 


About the authors



ABOUT SYSTEM PLUS CONSULTING

System Plus Consulting specializes in the cost analysis of electronics, from semiconductor devices to electronic systems.

Created more than 20 years ago, System Plus Consulting has developed a complete range of services, costing tools and reports to deliver in-depth production cost studies and estimate the objective selling price of a product.

System Plus Consulting engineers are experts in:

  • Integrated Circuits 
  • Power Devices & Modules 
  • MEMS & Sensors
  • Photonics 
  • LED 
  • Imaging 
  • Display 
  • Packaging 
  • Electronic Boards & Systems.

Through hundreds of analyses performed each year, System Plus Consulting offers deep added-value reports to help its customers understand their production processes and determine production costs. Based on System Plus Consulting’s results, manufacturers are able to compare their production costs to those of competitors.

System Plus Consulting is a sister company of Yole Développement.

More info at www.systemplus.fr 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REVERSE COSTING WITH

  • Detailed photos and identification

  • Scanning electron microscope and energy-dispersive X-Ray analyses of transistor structures

  • Scanning electron microscopy analysis of epitaxy layers

  • Manufacturing process flow

  • In-depth economic analysis

  • Manufacturing cost breakdown

  • Estimated sales price

  • Comparison between 20 different devices