Secure payment on i-micronews Contact Yole Développement for I Micronews reports

RSS I-micronewsYole Dévelopement on TwitterYole Développement on Google +LinkedIn Yole pageSlideshare Yole Développement I-Micronews

RF GaN Market: Applications, Players, Technology, and Substrates 2018-2023
Jan.2018

main_trends_telecom_base_station_yole_developpement
6 490 €

Choose a minimum of three reports from Yole Group and receive a discount of at least 36% on your package – Contact us!
+

 

Description

couv RF gan market jan2018 yole developpement

With 5G implementation coming, RF GaN market is developing fast.

A THREEFOLD INCREASE OVER THE NEXT FIVE YEARS

In the last couple of years, the radiofrequency (RF) GaN market experienced impressive growth and has reshaped the RF power industry landscape. By the end of 2017, the total RF GaN market was close to $380M. The penetration rate in various markets, and in particular telecom and defense applications, had a breakout period in the last two years. The compound annual growth rate (CAGR) in these two markets is more than 20%. Another significant boost will occur around 2019–2020, led by the implementation of 5G networks. The total RF GaN market size will be a factor of 3.4 larger by the end of 2023, posting a 22.9% CAGR from 2017-2023. This report describes GaN’s presence and development in different markets, including wireless infrastructure, defense and aerospace, satellite communication, wired broadband, both in coaxial cables used in cable TV (CATV) and fiber-to-the-home, and other industrial, scientific and medical (ISM) radio band applications. It also offers a complete analysis covering different emerging GaN players such as Sumitomo Electric, Wolfspeed, Qorvo, M-A/COM, UMS, NXP, Ampleon, RFHIC, Mitsubishi Electric, Northrop Grumman, and Anadigics. The report looks at GaN devices developed and implemented in applications spanning radar, base transceiver stations, CATV, very small aperture terminal (VSAT) satellite ground stations, and jammers. We invite you to read our report and discover more details about the wireless infrastructure and defense markets, as well as other applicative markets such as CATV and satellite communication.

RF GaN market8breakdown telecom yole developpement

TELECOM AND DEFENSE MARKETS ARE THE DRIVING FORCE

Yole Développement envisions telecom and defense markets acting as the mainstay of the industry. The telecom market, thanks to the increasing development pace of 5G networks, will bring a huge opportunity for GaN devices beginning in 2018. Compared to existing silicon LDMOS and GaAs solutions, GaN devices are able to deliver the power/efficiency level required for next generation high frequency telecom networks. Also, GaN’s broadband capability is one of the key elements for enabling important new technologies, such as multi-band carrier aggregation. GaN HEMTs have been the candidate technology for future macro base station power amplifiers. Yole Développement estimates most sub-6GHz macro network cell implementation will use GaN devices because LDMOS can no longer hold up at such high frequencies and GaAs is not optimum for high power applications. However, because small cells do not need such high power existing technology like GaAs still has advantages. At the same time,market volumes will increase faster because higher frequencies reduce the coverage of each base station, and thus more transistors will be implemented. The defense market has been the major driving force for GaN development in the past decades. Originating in the US Department of Defense, GaN devices have been implemented in new generation aerial and ground radars. GaN’s high power capability improves detection range and resolution, and designers are becoming increasingly familiar with this new technology. Nevertheless, this military-related technology is very sensitive. And as GaN devices are becoming popular in defense applications, the development of the nonmilitary part could be affected. This is especially true in terms of mergers and acquisitions. Governments could block deals if businesses target military applications, as in Aixtron’s acquisition by FGC Investment Fund, or Wolfspeed’s by Infineon. We invite you to read our report and discover more details about the wireless infrastructure and defense markets, as well as other applications like wired network and satellite communication.

main trends telecom base station yole developpement

WHICH IS THE RIGHT WAY TO DEVELOP: INTEGRATED OR FOUNDRY-BASED MANUFACTURING? GaN-ON-SiC OR GaN-ON-SILICON?

After decades of development, GaN technology is now accessible across different continents. Leading players include Sumitomo Electric, Wolfspeed (Cree), Qorvo, as well as many other players in US, Europe and Asia. Compound semiconductors differ from the traditional silicon-based semiconductor industry. The epitaxy process is much more important than conventional silicon processes, affecting the quality of the active region, with a huge impact on device reliability. That’s the reason why today leading companies are strong in these processes and would love to have internal production capacity, keeping technology know-how secret. Nevertheless, fabless design houses are developing very fast with their foundry partners to provide GaN technology. With their good relationship and sales channels, leading players like NXP and Ampleon might change the competitive landscape.At the same time, there are also two competing technologies in the market: GaN-on-SiC and GaN-on-silicon. They use different materials as their substrates but share similar characteristics. In the theory, GaN-on-SiC has better performance and today most players are using this technology. However, companies like M/A-COM are pushing GaN-on-Silicon to be implemented in various applications. It is still early, but for now GaN-on-silicon remains a challenger to the incumbent GaN-on-SiC solution. Our previous report covered several different scenarios and their potential impact on the overall RF GaN market and its players. In this new version we develop different scenarios, and present a new perspective on the market’s size.

 

business model comparision IDM vs foundry yole

Objectives of the Report

  • Provide an overview of the RF GaN market
  • Analyze different players in different markets, along with their product range and technologies
  • Outline market access/market size evolution from 2017–2023 broken down by technology
  • Highlight the main technologies in the different markets
  • Explain the needs of different RF markets and the corresponding impact on the needs for different technologies, along with geographical considerations

 

WHAT'S NEW

  • Update of our RF GaN report with newest market developments and technology trends
  • Discussion about GaN-on-SiC and GaN-on-silicon market development
  • Technology development in different RF GaN markets and the competitive landscape
  • Main RF power players and their technology development status
  • Different business models in the industry

 

 

Table of contents

Revision of our last GaN RF report 9


> What’s new?
> Market forecast comparison

 

Executive summary 12


 

GaN RF devices: Applications overview 30


> Applications for GaN devices in RF electronic systems
Radio frequency band range and applications
> GaN devices: applications roadmap

> RF power applications as a function of frequency and power
> Technology trend in different markets
> RF Power devices: technology breakdown
> RF GaN devices: market forecast
> Market overview

 

Wireless infrastructure 42


Cellular technology development
> 5G technology adoption: Operator’s timeline
> Operator’s dilemma
> Future Cellular Network structure and base stations
> How to expand the network capacity?
> Why small cells?
> Typical LTE base station and cell tower
> Backhaul for Point-to-Point (PtP) and Point-to-Multipoints (PtMP)
> Key enabling technologies for 5G
> Future development in telecom base stations
> Base station type and number forecast
> Small cell forecast
> Estimated RF GaN device need in Telecom
> Estimated total market for RF GaN device in Telecom

 

Defense 84


> GaN application potential in defense market
Military radar
Military RF applications and frequency bands
Market drivers for GaN RF in defense applications
Military market impact on GaN industry
Roadmap for RF transistor volume in defense applications
Estimated total accessible market for GaN FET in defense
Defense: GaN product scheme

 

Civil radar & avionics 99


> Commercial/scientific radar
> Commercial avionics
> Land mobile
> Device development trend in land mobile PA
> Weather radar
> RF GaN transistor volume & market in NON-military RADAR applications

 

CATV market 107


> Market drivers for GaN electronics in CATV
> Evolution of DOCSIS 3.1
> CATV market in geographical terms 
> HFC and FTTH comparison
> CATV market evolution

 

Satellite communications market 121


> Market drivers for GaN RF in SATCOM
> Market drivers for GaN electronics in V-SAT
> Future development in SATCOM market
> GaN implementation in VSAT T&R unit
> Satellite communications: GaN RF product scheme
> Conclusions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RF energy 130


> RF GaN device for RF energy
> Microwave ovens
> Plasma lighting
> Estimated yearly needs & market size for RF energy market

 

  

RF GaN HEMT technology overview


Power and frequency regions for different semiconductors
> GaN HEMT device structure
> GaN / SiC / Si / GaAs: material properties & power transistor comparison
> GaN’s added values
> Advantages at the system level for PA, LNA, and RF switch
> GaN MMIC description
> Device life model and activation energy
> Reliability test of today and the difficulties
> GaN HBT for cellphone applications?

 

Package for RF GaN 154


> Copper flange presentation
> RF power transistor design
> Why using copper instead of other materials? 
> Challenges to face to switch to copper substrate
> Focus on die attach: materials
> Hermetic package
> Construction of a typical RF ceramic package & LDMOS package
> Non hermetic plastic package
> RF non-hermetic package drivers & barriers
> GaN device package as of 2017
> Driver for plastic package
> Device package trend in the future
> GaN RF packaging roadmap

 

 

GaN RF Devices: industrial landscape 193


> Major GaN RF players and their device frequency range
> Main GaN RF players and their target applications
> Market landscape
> Mapping: players for power RF GaN-based devices
> Special focus on China
> Debating between IDM and fabless in the GaN industry
> Global industrial supply chain GaN
> Estimate of GaN RF player market share
> Global industrial supply-chain

 

Special Focus on GaN RF technology 210


> GaN RF substrate diameter evolution
> GaN-on-silicon vs. gan-on-sic: comparison & future development scheme
> Forecast of GaN on SiC/Silicon market size comparison
> Where lies the opportunity?

 

General conclusions 221


 

Yole Développement presentation 232


 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Companies cited

Aethercomm
Alcatel-Lucent
Ampleon
Anadigics
AT&T
Bell Laboratory
Cisco
China Mobile
China Telecom
China Unicom
Cree
Dynax
Dowa
EADS
Epigan
Ericsson
Eudyna
Freiburg/ Univ. Ulm/Fraunhofer IAF
Filtronic
Freescale
Fujitsu
Global Communication Semiconductors
Hittite/Keragis
Huawei
II-VI Inc
IMEC
IMECAS Infineon
Intel
IQE
KDDI
KT
LG Plus
Lockheed Martin
M/A-COM
Microsemi
Mitsubishi Chemical
Mitsubishi Electric
Motorola


 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NEC
Nitronex
Norstel
Nokia Networks
Northrop Grumman
NTT
NTT DOCOMO
NXP
OMMIC
Powdec
Qorvo
Qualcomm
RFHIC
RF Lambda
RFMD
Samsung
SICC
SiCrystal
SK Telecom
Softbank
Sprint
STMicroelectronics
Sumitomo Electric
Enkris Semiconductor
Raytheon
TankeBlue
Telstra
Thales
Thales III-V Lab
T-Mobile
Toshiba
Triquint
UMS
Unity Wireless
Verizon
Vodafone
WIN Semiconductors
Wolfspeed
and ZTE...

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

KEY FEATURES OF THE REPORT

  • Market descriptions, including wireless infrastructure such as LTE and 5G, defense, civil radars, cable TV and fiber, satellite communications
  • Market size projection through 2023
  • Player landscape: product and foundry service analysis, target application, business model, market share
  • State-of-the-art in GaN HEMT technology
  • RF GaN wafer market
  • Comparison between two different GaN technologies: GaNon-SiC and GaN-on-silicon
  • RF GaN development trend: Yole Développement’s vision