For the Galaxy S7, Samsung has chosen the best CMOS image sensor technology, the first with copper-copper hybrid bonding
In the Galaxy S7, Samsung has introduced a new CMOS image sensor (CIS) from Sony. It provides full ‘Dual Pixel’ phase detection autofocus, deep trench isolation (DTI) and copper-copper (Cu-Cu) hybrid bonding.
The Samsung Galaxy S7 camera module integrates a 12Mpixel resolution CMOS image sensor with a pixel size of 1.4µm and an aperture of f/1.7. The increase of the pixel size compared to the Samsung Galaxy S6 implies a bigger CMOS image sensor die area. The module’s infrared filter is made on a plastic plate, unlike the iPhone 6S Plus, which used the more common blue glass filter.
The camera module, with dimensions of 12 x 12 x 5.3mm, is equipped with a 6-elements lens module and a voice coil motor (VCM) auto-focus actuator. There are three components on the flex: A STMicroelectronics gyroscope, Renesas optical image stabilization (OIS) driver and Winbond serial flash memory.
The CIS is assembled with a wire bonding process and uses a 3D hybrid bonding backside illumination (BSI) architecture from Sony (Exmor-RS). This is the first time this technology has been used in a camera module. It stacks two separate chips using optimized Cu-Cu hybrid bonding processes. One chip is a pixel array circuit which uses BSI technology, the other a 45nm technology node process logic ISP circuit. This hybrid bonding technology is probably direct bond interconnect (DBI) from Tessera.
Samsung used several sources for the assembly of the Galaxy S7 camera module.
The report includes comparisons with Samsung Galaxy S6 and iPhone 6S Plus rear camera modules.
Overview / Introduction
Company profile & Supply Chain
Physical Analysis
> Camera module view and dimensions> Camera module disassembly> STMicroelectronics L2G2IS gyroscope> Renesas OIS driver> Winbond Serial flash memory> Cross-Section Camera Module (including Housing, AFA/OIS, IR Filter, FPC)> Comparison with Samsung Galaxy S6 and iPhone 6S Structure> CMOS Image Sensor - View and dimensions - Pads, wire bonding and Tungsten grid - CIS pixels - Logic circuit (main blocks, transistors, SRAM, ROM)> CMOS Image Sensor Cross-Section - Overview - Pixel Array circuit - Logic circuit - Pad trench - Cu-Cu hybrid bonding> Comparison with iPhone 6S and 6S Plus CMOS Image Sensor
CIS Manufacturing Process Flow
> Global Overview> Logic Circuit Front-End Process> Pixel Array Circuit Front-End Process> BSI, Cu-Cu Hybrid Bonding and Microlens Processes> CIS Wafer Fabrication Unit
Cost Analysis
> Cost Analysis Synthesis> The Main Steps Used in the Economic Analysis> Yield Hypotheses> CMOS Image Sensor Cost- Logic circuit front-end cost- Pixel Array front-end cost- BSI and Cu-Cu hybrid bonding front-end cost- Color filter and Microlens front-end cost- Total front-end cost- Back-end: tests and dicing- CIS wafer and die cost> Camera Module Assembly Cost- Lens module cost- AFA/OIS cost- Final assembly cost> Camera Module Cost
Technology and Cost comparison with Samsung 6 and iPhone 6s
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Detailed Photos
Precise Measurements
Material Analysis
Manufacturing Process Flow
Supply Chain Evaluation
Manufacturing Cost Analysis
Selling price estimate
Comparison with Samsung Galaxy S6 camera module structure
Comparison with iPhone 6S Plus camera module structure
