The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
Overview / Introduction
> Synthesis of the physical analysis> Package analysis Package opening Package cross-section> MOSFET die MOSFET die view and dimensions MOSFET die process MOSFET die cross-section MOSFET die process characteristic
MOSFET Manufacturing Process
> MOSFET die front-end process> MOSFET die fabrication unit> Final test and packaging fabrication unit
> Synthesis of the cost analysis> Yield explanations and hypotheses> MOSFET die MOSFET front-end cost MOSFET probe test, thinning and dicing MOSFET wafer cost MOSFET die cost Wafer cost evolution Die cost evolution> Complete MOSFET Assembled components cost Synthesis of the assembly Component cost
> Estimation of selling price
> STMicroelectronics, Cree and Rohm 1200V SiC MOSFET> Comparison between 1200V Silicon IGBT and SiC MOSFET
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Manufacturing process flow
Supply chain evaluation
Manufacturing cost analysis
Selling price estimation
Comparison with Rohm and Cree SiC MOSFETs
Comparison between 1200V Silicon IGBTs and SiC MOSFETs