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STMicroelectronics 1200V SiC MOSFET STC30N120
Jan.2017

stmicroelectronics1200vsicmofset_systemplusconsulting
3 290 €

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Description

Yole SP17309 STMicroelectronics 1200V SiC MOSFET iconeThe 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost

The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.


The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.


The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.


The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.


The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.


It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.

 

 STMicroelectronics1200VSiCMosfet SystemPlusConsulting 3STMicroeletronics1200SiCMOSFET SystemPlusConslting 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table of contents

Overview / Introduction


 

Company Profile


> STMicroelectronics

 

Physical Analysis


> Synthesis of the physical analysis
> Package analysis
   Package opening
   Package cross-section
> MOSFET die
   MOSFET die view and dimensions
   MOSFET die process
   MOSFET die cross-section
   MOSFET die process characteristic

 

MOSFET Manufacturing Process


> MOSFET die front-end process
> MOSFET die fabrication unit
> Final test and packaging fabrication unit 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cost Analysis


> Synthesis of the cost analysis
> Yield explanations and hypotheses
> MOSFET die
   MOSFET front-end cost
   MOSFET probe test, thinning and dicing
   MOSFET wafer cost
   MOSFET die cost
   Wafer cost evolution
   Die cost evolution
> Complete MOSFET
   Assembled components cost
   Synthesis of the assembly
   Component cost

 

Price Analysis


> Estimation of selling price

 

Comparison


> STMicroelectronics, Cree and Rohm 1200V SiC MOSFET
> Comparison between 1200V Silicon IGBT and SiC MOSFET

 

Company Services


 

 

 


About the authors



ABOUT SYSTEM PLUS CONSULTING

System Plus Consulting specializes in the cost analysis of electronics, from semiconductor devices to electronic systems.

 

Created more than 20 years ago, System Plus Consulting has developed a complete range of services, costing tools and reports to deliver in-depth production cost studies and estimate the objective selling price of a product.

 

System Plus Consulting engineers are experts in:

  • Integrated Circuits 
  • Power Devices & Modules 
  • MEMS & Sensors
  • Photonics 
  • LED 
  • Imaging 
  • Display 
  • Packaging 
  • Electronic Boards & Systems.

Through hundreds of analyses performed each year, System Plus Consulting offers deep added-value reports to help its customers understand their production processes and determine production costs. Based on System Plus Consulting’s results, manufacturers are able to compare their production costs to those of competitors.

System Plus Consulting is a sister company of Yole Développement.

 

More info at www.systemplus.fr 

 

 

 

 

 

 

 

 

 

 

  

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REVERSE COSTING WITH

  • Detailed photos

  • Precise measurements

  • Materials analysis

  • Manufacturing process flow

  • Supply chain evaluation

  • Manufacturing cost analysis

  • Selling price estimation

  • Comparison with Rohm and Cree SiC MOSFETs

  • Comparison between 1200V Silicon IGBTs and SiC MOSFETs