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Transphorm TPH3208PS 650V GaN HEMT
Feb.2017

transphorm_tph3208ps_650v_gan_hemt_system_plus_consulting
3 290 €

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Description

Transphorm TPH3208PS 650V GaN HEMT flyer

A new 650V GaN HEMT from Transphorm with a simplified cascode structure and enhanced electrical characteristics

System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascode structure or special packaging.


Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.


The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.


Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.


Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.

 

Transphorm TPH3208PS 650V GaN HEMT System Plus Consulting 2

Transphorm TPH3208PS 650V GaN HEMT System Plus Consulting 3

          

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

  

 

 

Table of contents

Overview / Introduction


Executive summary
Reverse costing methodology

 

 

Company Profile


Transphorm

 

 

Physical Analysis


Synthesis of the physical analysis
Package analysis
> Package opening
> Package cross-section
HEMT die
> HEMT die view & dimensions
> HEMT die process
> HEMT die cross-section
> TEM analysis of epitaxy
> HEMT die process characteristics

MOSFET die

 

 

HEMT Manufacturing Process


HEMT Manufacturing Process
HEMT Die Front-End Process
HEMT Die Fabrication Unit
MOSFET Die Fabrication Unit
Final Test and Packaging Fabrication Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

  

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cost Analysis


Overview of the Cost Analysis
Yield Explanations and Hypotheses
HEMT die
> HEMT die front-end cost
> HEMT die probe test, thinning, and dicing
> HEMT die wafer cost
> HEMT die cost
> Wafer cost evolution
> Die cost evolution
MOSFET die
>MOSFET front-end cost

> MOSFET die probe test, thinning and dicing
> MOSFET wafer cost
> MOSFET die cost

Final device
Assembled components cost
> Overview of the assembly
> Component cost

 

 

Price Analysis


Estimated sales price

 

 

Comparison


Comparison with Transphorm and GaN Systems HEMTs

 

 

 


About the authors



ABOUT SYSTEM PLUS CONSULTING

System Plus Consulting specializes in the cost analysis of electronics, from semiconductor devices to electronic systems.

 

Created more than 20 years ago, System Plus Consulting has developed a complete range of services, costing tools and reports to deliver in-depth production cost studies and estimate the objective selling price of a product.

 

System Plus Consulting engineers are experts in:

  • Integrated Circuits 
  • Power Devices & Modules 
  • MEMS & Sensors
  • Photonics 
  • LED 
  • Imaging 
  • Display 
  • Packaging 
  • Electronic Boards & Systems.

Through hundreds of analyses performed each year, System Plus Consulting offers deep added-value reports to help its customers understand their production processes and determine production costs. Based on System Plus Consulting’s results, manufacturers are able to compare their production costs to those of competitors.

System Plus Consulting is a sister company of Yole Développement.

 

More info at www.systemplus.fr 

 

 

 

 

 

 

 

 

 

 

  

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REVERSE COSTING WITH

  • Detailed photos and identification

  • SEM analysis of epitaxy layers and transistor structure

  • EDX analysis of epitaxy layers

  • Manufacturing process flow

  • In-depth economic analysis

  • Manufacturing cost breakdown

  • Selling price estimation

  • Comparison with other Transphorm and GaN Systems devices