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Cree announces it is forming a joint venture with San’an Optoelectronics to produce and deliver to market high-performing, mid-power lighting class LED packaged products in an exclusive arrangement to serve the expanding markets of North and South America, Europe and Japan, and serve China and the rest of the world on a non-exclusive basis.

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Sivers IMA Holding of Kista, north of Stockholm in Sweden (a fabless supplier and developer of microwave and millimeter-wave components for WiGig/5G wireless and radio-frequency network applications) has entered into an agreement to acquire Compound Semiconductor Technologies Global (CST Global) of Hamilton (near Glasgow), Scotland, UK, a privately held company that designs and makes lasers and other semiconductor-based optical products.

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Analog Devices (ADI) has acquired OneTree Microdevices, a fabless startup developing GaAs and GaN amplifiers for cable (CATV) and fiber-to-the-home (FTTH) infrastructure. ADI currently supplies data converters, clocking and control/power conditioning for cable access applications. The addition of OneTree Microdevices enables ADI to supply the complete signal chain for cable infrastructure.

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California-based Transphorm has developed what may be the first offerings of their kind in the market. The first is a bilateral switch which will enable 2-4x part count reduction and loss reduction, while the second is a 900V GaN HEMT, which will enable increased energy efficiency. The products are used to convert power in applications such as power supplies, solar inverters, AC-AC converters, industrial converters and electric vehicles.

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“The gate driver IC  market will benefit from the steady growth of the power semiconductor industry”, announces the Power Electronics team from Yole Développement (Yole).  Indeed, in recent years, a much greater percentage of home appliances, electric vehicles, hybrid vehicles, including mild hybrids, and renewable energy products have implemented dedicated power semiconductors devices on-board.

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EPC introduces EPC2045 and EPC2047 eGaN FETs that are half the size of prior generation eGaN transistors with significantly higher performance. Efficient Power Conversion, the world’s actor in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs.

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