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ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 Module
Jul.2016

rohm_sic_trench_mosfet_system_plus_consulting_2
3 490 €

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Description

Rohm SiC flyer

The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation

The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters,  photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure  halves on-resistance and reduces switching losses by 42%.

The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module. 

Rohm SiC trench Mosfet component System Plus Consulting

The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.

The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.

Rohm SiC trench Mosfet System Plus Consulting 2

It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.

 Rohm SiC trench Mosfet System Plus Consulting

 

Table of contents

Overview / Introduction


 

Company profile & Supply Chain


 

Physical Analysis


> Synthesis of the Physical Analysis
> Package Analysis
- View, dimensions and marking
- Housing
- Base plate cross-section
- DBC cross-section
> MOSFET Analysis
- Dimension
- Die process
- Die cross-section
> SBD Diode Analysis
- Dimension
- Die process
- Die cross-section
> Comparison between Rohm’s

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Manufacturing Process Flow


> Overview
> MOSFET and Diode Process Flow
> Package Process Flow
> Description of Wafer Fabrication Units

 

Cost Analysis


> Synthesis of the Cost Analysis
> Main Steps of Economic Analysis
> Yields Explanation
> MOSFET Cost Analysis
- Wafer cost hypothesis
- MOSFET wafer cost
- Breakdown by process step
- MOSFET probe cost
- MOSFET die cost
> Cost Analysis Diode
> Cost Analysis BSM180D12P3C007
- Assessing BOM
- DBC cost
- BSM180D12P3C007

                                              

Comparison between BSM180D12P3C007 and  CAS120M12BM2


> Module / MOSFET / Diode
> Cost

 

Estimated Manufacturer Price Analysis


> Manufacturers’ ratios
> Estimated manufacturer price

 


About the authors



ABOUT SYSTEM PLUS CONSULTING

Headquartered in Nantes, France, System Plus Consulting is specialized in technology and cost analysis of electronic components and systems. During our 20 years in business, we have built and refined detailed cost models as the primary tools for hundreds of analyses.

The highly qualified System Plus cost engineers combine broad and deep skills in semiconductor and electronics technologies with years of experience in cost modeling. We offer:custom reverse costing analyses, standard reverse costing reports and costing tools within the following fields: integrated circuits, power devices and modules, MEMS & sensors, photonics (LED, Image Sensors), packaging and electronic boards and systems. www.systemplus.fr.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REVERSE COSTING WITH

  • Detailed Photos

  • Precise Measurements

  • Material Analysis

  • Manufacturing Process Flow

  • Supply Chain Evaluation

  • Manufacturing Cost Analysis

  • Estimated Sales Price

  • Comparison between Rohm’s planar and trench SiC MOSFETs

  • Comparison between Rohm’s and Cree’s 1200V MOSFET modules