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RF Front End modules for cellphones
Which direction towards 4G+/5G ?
The continual growth of mobile data has led to a need to use more of the radio spectrum. In mobile communication, this resource becomes scarce as the number of users and technologies explodes. In order to face this overflowing demand, handsets have to meet complex requirements such as :
- Multi-band for regional and global roaming
- Multi-mode to support multiple cellular modes including 2G, 3G, 4G, WiFi/Bluetooth (BT), Near Field Communications (NFC) and Global Positioning System (GPS)
- Multiple-Input Multiple-Output (MIMO) to allow higher data rates and higher effective range
- Smart antenna techniques such as beamforming or diversity to enhance the performance of a single data signal
- CA to support broader bandwidths, which improves broadband experience, offering higher peak data rates, higher overall network capacity and lower latency.
All these requirements bring a huge challenge to handset RF front end architecture (RFFE), design and manufacturing to handle bands that span from low- to high-frequency. What are the anticipated evolution of such Front End architectures towards 4G+/5G ?
In this webcast, we provided a RFFE comparative technology analysis with 5 major flagship phones (Apple iPhone 7 Plus, Samsung Galaxy S7 Edge, Huawei P9, LG G5 and Xiaomi Mi5) to illustrate where do we stand today. We demonstrated how Original Equipment Manufacturer’s choices differ and illustrate each solution.
We then focused on the RFFE market status today and anticipate its evolution. We described the industrial ecosystem at module and component level and describe the anticipated technology evolutions in terms of semiconductor platforms in the coming 5 years. How will 4G+/5G affect such technology choices? Which semiconductor platform is best positioned to win ? Stay tuned with our RF webcast…
Claire Troadec is leading the RF activity at Yole Développement. She has been a member of the MEMS manufacturing team from 2013. She graduated from INSA Rennes in France with an engineering degree in microelectronics and material sciences. She then joined NXP Semiconductors, and worked for 7 years as a CMOS process integration engineer at the IMEC R&D facility. During this time, she oversaw the isolation and performance boost of CMOS technology node devices from 90 nm down to 45 nm. She has authored or co-authored seven US patents and nine international publications in the semiconductor field and before joining Yole Développement managed her own distribution company.
Dr. Stéphane Elisabeth has joined System Plus Consulting team this year to provided his deep knowledge in RF application, material characterization and Electronic systems. He holds an Engineering degree in RF and Digital Technology, and a PhD in Materials for Microelectronics.
Since 2009, Camille Veyrier has been one of Yole Développement’s Media and Communication Coordinators, in charge of event organization and media product development (websites, magazines, etc.). Camille works closely with Yole Développement’s Corporate Communication department, specifically in the fields of Power Electronics, Advanced Packaging, Photovoltaics, Compound Semiconductors, Image Sensors and Nanotechnology. Camille earned a degree in Communication & Marketing from a leading Translation and International Business school in Lyon.
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