GaN for RF electronics: GaN-on-SiC vs GaN-on-Si?

“In view of the emerging GaN RF market, notable investments in recent years have been shaping the future relationship between demand and supply, which is important to watch closely.” asserts Ezgi Dogmus, PhD. Team Lead Analyst in Compound Semiconductor & Emerging Substrates activity within the Power & Wireless Division at Yole Développement (Yole). She adds:“GaN-on-SiC is the main technology platform. The market leader at device level, SEDI, has partnered with the leading SiC wafer supplier, II-VI, for vertical integration”.

In this dynamic context, Yole investigates technologies and related markets in depth. The market research and strategy consulting company points out the latest innovations and underlines the business opportunities.
Released today, the GaN RF Market: Applications, Players, Technology, and Substrates 2021 report is an overview of GaN RF markets with market and technology trends: telecom infrastructure, handset, defense, satellite communication, RF energy and civil radar. This report includes an overview on capacity expansion and company profiles of the leading suppliers such as NXP, Wolfspeed, SICC and II-VI and it provides GaN’s positioning amongst other competing technologies such as LDMOS and GaAs. Including market trends and forecasts, supply chain, technology trends, technical insights and analysis, take away and outlook, this study also points out the GaN-on-SiC and GaN-on-Si technology platforms including their market penetration, technological challenges and supply chain aspects.

What are the economic and technological challenges of the RF GaN industry? What are the key drivers and the related applications? GaN-on-Si vs Gan-on-SiC: what is the status of the production? Who are the suppliers to watch, and what innovative technologies are they working on?
Yole presents today its vision of the RF GaN industry.

As analyzed by Yole’s team in the new GaN RF Market: Applications, Players, Technology, and Substrates 2021 report, in 2020, NXP opened the world’s first 6” GaN-on-SiC fab in Arizona, US. These movements will further accelerate the evolution from 4” to 6” for GaN-on-SiC. At foundry level, major actors like Win Semiconductor are expanding their capacity to fulfill growing market demand. In addition, there is strong motivation of technology independence in the Chinese ecosystem, for example at SICC, CETC, HiWAFER and Sanan IC. Also, GaN-on-Si keeps attracting newcomers.
According to Selsabil SEJIL, PhD. Technology & Market Analyst, specialized in Compound Semiconductors and Emerging Substrates at Yole: “Meanwhile, as Macom-STMicroelectronics’ development on 6” platform is ongoing, GlobalFoundries and Raytheon recently announced a partnership to target 5G wireless applications, defense and beyond. To serve increasing demand, newcomers have been joining with newly built capability”.

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Source: http://www.yole.fr/

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