GeneSiC announces the availability of its industry 3rd generation Silicon Carbide MOSFETs that feature industry performance, robustness and quality to harness never before seen levels of efficiency and system reliability in automotive and industrial applications.
GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include higher efficiency, faster switching frequency, increased power density, reduced ringing (EMI) and compact system size.
These G3R™ SiC MOSFETs, offered in optimized low-inductance discrete packages (SMD and through hole), are highly optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. These devices have substantially better performance levels as compared to competing products. An assured quality, supported by fast turn-around high volume manufacturing further enhances their value proposition.
“After years of development work towards achieving the lowest on-state resistance and enhanced short circuit performance, we are excited to release the industry’s best performing 1200V SiC MOSFETs with over 15+ discrete and bare chip products. If the next-generation power electronics systems are to meet the challenging efficiency, power density and quality goals in applications like automotive, industrial, renewable energy, transportation, IT and telecom, then they require significantly improved device performance and reliability as compared to presently available SiC MOSFETs” said Dr. Ranbir Singh, President at GeneSiC Semiconductor.
- Superior QG x RDS(ON) figure-of-merit
G3R™ SiC MOSFETs feature the industry’s lowest on-state resistance with a very low gate charge, resulting in to 20% better figure-of-merit than any other similar competitor device.
- Low conduction losses at all temperatures
GeneSiC’s MOSFETs feature the softest temperature dependence of on-state resistance to offer very low conduction losses at all temperatures; significantly better than any other trench and planar SiC MOSFETs in the market.
- 100 % avalanche tested
Robust UIL capability is a critical requirement for the majority of field applications. GeneSiC’s 1200V SiC MOSFET discrete are 100 % avalanche (UIL) tested during production;
- Low gate charge and low internal gate resistance
These parameters are critical towards realizing ultra-fast switching and achieving highest efficiencies (low Eon -Eoff) across a wide range of application switching frequencies
- Normally-off stable operation up to 175°C
All of GeneSiC’s SiC MOSFETs are designed and fabricated with state-of-the-art processes to deliver products that are stable and reliable at all operating conditions without any malfunction risk. The superior gate oxide quality of these devices prevents any threshold (VTH) drift.
- Low device capacitances
G3R™ are designed to drive faster and more efficient with their low device capacitances – Ciss, Coss and Crss
- Fast and reliable body diode with low intrinsic charge
GeneSiC’s MOSFETs feature benchmark low reverse recovery charge (QRR) at all temperatures; 30% better than any similarly rated competitor device. This offers further reduction in power losses and boosts operating frequencies.
- Ease of use
G3R™ SiC MOSFETs are designed to be driven at +15V / -5V gate drive. This offers broadest compatibility with existing commercial IGBT and SiC MOSFET gate drivers
- Electric Vehicle – Power Train and Charging
- Solar Inverter and Energy Storage
- Industrial Motor Drive
- Uninterruptible Power Supply (UPS)
- Switched Mode Power Supply (SMPS)
- Bi-directional DC-DC converters
- Smart Grid and HVDC
- Induction Heating and Welding
- Pulsed Power Application
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