Engineered materials and optoelectronic component maker II-VI of Saxonburg, PA, USA has won the Best Strategic Partner Award from China-based Dynax Semiconductor as its supplier of silicon carbide (SiC) substrates for wireless RF devices.
Dynax’s founder & CEO Dr Naiqian Zhang presented II-VI with the award for its outstanding supplier performance in quality, delivery and service. II-VI supplies Dynax with semi-insulating SiC substrates that enable gallium nitride-on-silicon carbide (GaN-on-SiC) RF power amplifiers deployed in 4G and 5G wireless base stations.
“Demand for GaN-on-SiC power amplifiers is increasing rapidly,” notes Dr Gary Ruland, VP for II-VI’s Wide Bandgap Semiconductors business unit. “II-VI continues to receive prestigious supplier and industry awards in China, demonstrating our strategic relationship with our customers in that region.”
Semi-insulating SiC substrates enable RF power amplifiers for next-generation wireless networks operating over a wide frequency spectrum in the gigahertz range, including in the millimeter-wave bands. II-VI is a supplier of SiC substrates, with a strong technology portfolio of 30 active patents and with highly differentiated and proprietary manufacturing platforms and technologies including crystal growth, substrate fabrication, and polishing.
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