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Memory

Micron this week announced that it had started mass production of its first LPDDR4X memory devices using its second-generation 10 nm-class process technology. The new memory devices offer standard LPDDR4X data transfer rates of up to 4.266 Gbps per pin and consumes less power than earlier LPDDR4 chips.

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Magneto-resistive RAM (MRAM) developer Spin Memory — formerly known as Spin Transfer Technologies — announced $52 million in series B funding led by IP supplier Arm and the venture capital arm of chip equipment vendor Applied Materials. Spin Memory, based in Fremont, Calif., also announced a deal with Applied to create an embedded MRAM solution. The company also announced that Arm has licensed the company's Endurance Engine architecture to deliver new SRAM-like embedded MRAM design solutions to customers.

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SK Hynix has launched what the company claims is the world's first 96-layer 512Gb CTF (charge trap flash)-based 4D NAND flash based on its TLC (triple-level cell) arrays, using 3D CTF design paired with the PUC (peri. under cell) technology. The company will start the early stage of mass production of the chips later in 2018.

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Everspin Technologies, the world's developer and manufacturer of Magnetoresistive RAM (MRAM), entered into a multi-year partnership with SilTerra, a world-class semiconductor manufacturing services company located in Kulim, Malaysia, to create additional manufacturing capacity for Toggle MRAM products. This partnership is part of a three-way agreement between Everspin, SilTerra and Bosch Sensortec, a licensee of Everspin’s TMR sensor intellectual property.

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Micron Technology, received the announcement from the U.S. Department of Justice that on Nov. 1, 2018, it had issued indictments against United Microelectronics (UMC), Fujian Jinhua Integrated Circuit (Jinhua) and three former employees of Micron's Taiwan unit for conspiracy to commit trade secret theft, economic espionage and related crimes.

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Memory chip maker SK Hynix (Icheon, South Korea) is set to follow in the footsteps of Intel and Micron with its own version of a 3D-crosspoint non-volatile memory based on phase-change materials. SK Hynix is due to present a paper outlining the technology at the International Electron Devices Meeting (IEDM) that takes place December 1 to 5 in San Francisco, California.

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