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Rambus announced a joint venture in China, Reliance Memory, has been formed to commercialize Resistive Random Access Memory (RRAM) technology, with partner GigaDevice, a leading provider in China of non-volatile memory solutions and 32-bit microcontrollers, along with strategic investment partners THG Ventures, West Summit Capital, Walden International and Zhisland Capital. The new venture will bring next-generation memory technology to market for use in embedded devices.

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Co-developed technology solution enables significant power and die size reductions for IoT and wearable products. GLOBALFOUNDRIES and evaderis announced that they are co-developing an ultra-low-power microcontroller (MCU) reference design using GF’s embedded magnetoresistive non-volatile memory (eMRAM) technology on the 22nm FD-SOI (22FDX®) platform.

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Micron Technology,announced three new 64-layer, second-generation 3D NAND storage products, which support the high-speed Universal Flash Storage (UFS) 2.1 standard. Micron's new mobile 3D NAND products are available in 256GB, 128GB and 64GB capacities. These new mobile solutions are based on Micron's industry-leading triple level cell (TLC) 3D NAND technology, empowering smartphone makers to enhance the user experience with next-generation mobile features such as artificial intelligence (AI), virtual reality and facial recognition.

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Nantero Inc. (Woburn, Mass.), founded in 2001, has been plowing a painstaking path towards the introduction of its carbon nanotube (CNT) based non-volatile memory technology.

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eVaderis is, the worldwide guiding forerunner offering innovative IP solutions based on new disruptive embedded NVM, has announced that it has joined Mentor, a Siemens Business’ OpenDoor® Program to build advanced design solutions for embedded non-volatile (NVM) MRAM technology.

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Crocus Nano Electronics (CNE) announced important update on its proprietary STT (Spin Torque Transfer) MRAM technology. According to Product Engineering Director Alexey Khvalkovskiy, CNE has been working on the STT-MRAM development since the beginning of 2016 and the latest test results on 90 nm pMTJ (perpendicular magnetic tunnel junction) wafers demonstrated the technology sufficiency for early commercialization.

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