Microchip releases SiC power devices in production volumes

Microchip SiC power devices_for-EVs

An article written by Gina Roos, editor-in-chief for Electronic Products – The Microsemi 700-V SiC MOSFETs and 700-V and 1,200-V SiC Schottky barrier diodes are now available in volume, adding more than 35 discrete products to the Microchip SiC family.

Continuing to build its portfolio of SiC power products, Microchip Technology Inc., via its Microsemi subsidiary, announced the production release of a family of SiC power devices. Offering the inherent advantages of wide-bandgap technology, including ruggedness and performance advantages, the new products include 700-V SiC MOSFETs and 700-V and 1,200-V SiC Schottky barrier diodes (SBDs). Wide-bandgap semiconductors are fast finding homes in a host of automotive, industrial, and military/aerospace applications.

Wide-bandgap semiconductor-based materials such as SiC and GaN “are intrinsically advantageous compared to silicon due to their higher bandgaps, lower conduction losses, and higher electron mobility,” said Elena Barbarini, Ph.D., head of Department Devices at System Plus Consulting, in a recent Yole Développement (Yole) report. “This gives the possibility to reduce the size of their components and their passives [because] the switching frequency can be increased while having overall less losses, thus making the system more efficient.” … Full article

Source: https://www.electronicproducts.com

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