MRAM, a promise beyond eFlash

Abstract Earth with magnetic fields

“Embedded MRAM is picking us steam thanks to the strong involvement of top foundry/IDM players and equipment suppliers”, comments Simone Bertolazzi, PhD. Technology & Market Analyst at Yole Développement (Yole).
Nowadays, there is broad consensus in the memory industry that the 28nm/22nm silicon lithography nodes will be the last technology nodes for eFlash . This is not because of fundamental scalability limitations, but because of economic barriers. Therefore a new embedded NVM for code/data storage is needed. At the same time, scaling of volatile SRAM is slowing down due to cell footprint degradation occurring at advanced nodes. A denser working embedded memory would therefore be highly desirable.

Thanks to the support of a large number of leading companies, the embedded memory market has the potential to reach US$1.2 billion by 2024, growing with a 295% CAGR over this period… Full article

Executives Memory Breakfast

Last week, Yole and its partner System Plus Consulting welcomed leading memory companies at their first Executives Memory Breakfast in Santa Clara, during the Memory week.

During 3 hours, analysts detailed the status of the memory business with key figures and market shares. They shared their vision of the industry during a Q&A session: DRAM, NAND, emerging NVM… were part of the program.

The Memory Week took place this week in Santa Clara, with two key memory conferences: DRAM Developer Day and the Flash Memory Summit.

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