Navitas and Baseus deliver smallest 65W 3-port wall charger

Navitas Semiconductor of El Segundo, CA, USA has announced a partnership with Baseus (a consumer electronic brand of China-based Shenzhen Times Innovation Technology Co) to introduce the ‘2C1A’ 65W 3-port mobile wall charger with GaNFast (gallium nitride) power IC technology to achieve what is said to be the world’s smallest and lightest portable form-factor.

Founded in 2014, Navitas introduced what it claimed to be the first commercial GaN power ICs. The firm says that its proprietary ‘AllGaN’ process design kit (PDK) monolithically integrates GaN power field-effect transistors (FETs) with GaN logic and analog circuits, enabling faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets.

Baseus’ 2C1A power adapter uses highly integrated, speed-optimized gallium nitride (GaN) technology that replaces slow discrete silicon components, and enables the adapter to utilize high-frequency, high-efficiency, soft-switching techniques to shrink the size, weight and cost of passive components and heatsinks, says Navitas.
The 2C1A eliminates the need for three separate wall chargers by delivering three fast-charging outputs in a case size of only 3.2cm x 3.5cm x 7.5cm (84cc) and125g, which is less than half the size and weight of older, slower silicon-based designs, creating the ultimate all-in-one charger. To achieve optimal, simultaneous charging for a user’s laptop, tablet and smartphone, the 2C1A provides 65W of total power, with 45W guaranteed from the USB-C port 1 and 20W shared across the USB-C port 2 and USB-A outputs.

This is ‘Baseus 3.0’,” says Baseus’ founder & CEO Shiyou He. “The market has begun to redefine Baseus, and Baseus has begun to redefine itself. As the star product, the 2C1A GaN charger was launched based on Navitas’ GaNFast technology, which makes it the smallest three-port charger in the world,” he adds. “Baseus has the vision to work with partners to consumers into the GaN charging era.

Source: http://www.semiconductor-today.com/

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