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Compound Semiconductors

Taking advantage of the high performance of eGaN FETs, Rompower Energy Systems has announced a reference design for a tiny, 65 W, 94% efficient AC/DC power adaptor for laptops and other mobile devices.

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Seren Photonics, based near Cardiff, Wales, UK, a developer of semipolar gallium nitride and BluGlass Limited of Silverwater, Australia, a developer of semiconductor manufacturing process and equipment have announced the completion of phase 1 of the transfer of Seren’s semipolar GaN template process to the BluGlass MOCVD epitaxial services.

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Microsemi, a provider of semiconductor solutions differentiated by power, security, reliability and performance, and Analog Devices, the global high-performance analog technology company, announced a scalable Silicon Carbide (SiC) driver reference design solution based on a range of Microsemi SiC MOSFET products and Analog Device's ADuM4135 5KV isolated gate driver. The dual SiC MOSFET driver reference design provides user-friendly design guides enabling faster time to market for customers using Microsemi SiC MOSFETs and supports the transition to Microsemi's next generation SiC MOSFETs.

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IXYS an actor in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced the introduction of the PCO-7114-50-4 high-power pulsed laser diode driver by its IXYS Colorado division.

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Navitas Semiconductor of El Segundo, CA, USA has announced the availability of a 150W AC-DC reference design utilizing its gallium nitride (GaN) power ICs. With a power density of more than 21W/inches3 and efficiency of more than 95%, the NVE021A is more than 2x smaller than typical commercial designs and 40% smaller than the previous best-in-class, it is claimed.

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X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany. This accomplishment is the result of a joint development agreement launched in 2015, enabling cost/performance advantages that could not be achieved with smaller wafers.

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GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...
Status of the Sapphire Industry
Discover the presentation held by Eric Virey during the Sapphire Forum, the 6th of September...
SiC, Sapphire, GaN… : what is the business evolution of the non-Silicon based semiconductor industry?
Discover the presentation held by Pierric Gueguen at Semicon West, in San Fransisco, USA, in...

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