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Compound Semiconductors

Toyoda Gosei Co., Ltd. has achieved state-of-the-art high current operation (1) in a vertical GaN power semiconductor developed using gallium nitride (GaN), a main material in blue LEDs. Power semiconductors are widely used in power converters (2) such as power sources and adaptors for electronic devices. However, simultaneous achievement of both high breakdown voltage (3) and low loss (4) (low conduction loss and switching loss) at high levels has been difficult with conventional silicon due to its material properties.

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Cree has signed a non-exclusive, worldwide, royalty-bearing patent license agreement with Nexperia BV, a Dutch company.
The agreement provides Nexperia access to Cree’s extensive gallium nitride (GaN) power device patent portfolio, which includes over 300 issued U.S. and foreign patents that describe inventive aspects of high electron mobility transistor (HEMT) and GaN Schottky diode devices. The portfolio addresses novel device structures, materials and processing improvements, and packaging technology. The patent license involves no transfer of technology.

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Mersen announces a strategic investment in Silicon Carbide (SiC) semiconductor technology. Mersen, a global expert in electrical power and advanced materials, announces an agreement to acquire 49% of CALY Technologies, a Lyon-based start-up company developing Silicon Carbide (SiC) semiconductor devices along with a proven experience on protection functions.

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In 2016, Yole Développement (Yole) already pointed out the impressive growth of the EV/HEV industry and its huge impact on the power electronics industry with numerous technical issues. Two years later, cards have been handling, the playground is ready and the game should reveal some surprises.

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The unstoppable wave of transport electrification is not just a headline for German newspapers after Dieselgate, it is real – and the wave is originating in China. Chinese car makers have now more than half of the sales for battery and plug-in hybrid electric vehicles (BEV and PHEV), in an exploding market. In 2017, people bought 1.2 million BEVs and PHEVs, a 52% increase compared to 2016. Car makers sold 2.8 million full and mild HEVs last year, a 22% year-to-year increase. The new Yole Développement report "Power electronics for EV/HEV 2018" provides all the details on this market’s evolution and its impact on power devices and power modules. Want to know more?

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Veeco Instruments today announced that ON Semiconductor has ordered its Propel® High-volume Manufacturing (HVM) Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) system. Based on its successful beta evaluation of the Propel HVM tool, ON Semiconductor ordered the production-level Propel system for GaN power electronics manufacturing. As the industry’s first single-wafer cluster platform, the Propel GaN MOCVD system is specifically designed for high-voltage power-management devices used in data centers; automotive, information and communication technology; defense; aerospace and power distribution systems, among other applications.

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Upcoming Events

> CS ManTech
(May 7 - May 10, Austin, USA)

(May 13 - May 17, Chicago, USA)

> SCAPE - International Workshop in Applications of Wide Bandgap (WBG) Power Electronics
(June 11 - June 12, Stockholm, Sweden)


Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...
Status of the Sapphire Industry
Discover the presentation held by Eric Virey during the Sapphire Forum, the 6th of September...

Access to all our presentations