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Compound Semiconductors

Infineon Technologies AG acquires Siltectra GmbH, a start-up based in Dresden. The start-up has developed an innovative technology (Cold Split) to process crystal material efficiently and with minimal loss of material. Infineon will use the Cold Split technology to split silicon carbide (SiC) wafers, thus doubling the number of chips out of one wafer. A purchase price of 124 million Euros was agreed on with the venture capital investor MIG Fonds, the main shareholder.

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Driven by the development of data communications and the boom of Internet’s popularity, the sweet spot of Vertical Cavity Surface Emitting Lasers (VCSELs) has evolved. It has been, until recently, in short-distance data communication, but in the last few years, with the development of the latest generation of smartphones, VCSELs have made their way into high volume consumer applications. Automotive applications, such as Light Detection and Ranging (LiDAR) and gesture recognition, are expected to follow.

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Cree, announces that it signed a strategic long-term agreement to produce and supply its Wolfspeed® silicon carbide wafers to one of the world’s power device companies. The agreement, valued at more than $85 million, governs Cree’s supply of advanced 150 mm silicon carbide bare and epitaxial wafers during this period of extraordinary growth and demand for silicon carbide power devices.

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Laser and optical parts maker II-VI said it would buy Apple supplier Finisar for about $3.2 billion, to grab a bigger slice of 5G investments and sell more sensors for iPhones and driverless cars. II-VI will pay Finisar shareholders $26 per share, in cash and stock, a premium of 37.7 percent to Finisar’s closing share price.

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Engineered materials firm II-VI of Saxonburg, PA, USA has announced a strategic collaboration with Japan’s Sumitomo Electric Device Innovations (SEDI), a subsidiary of Sumitomo Electric Industries, to establish a vertically integrated 150mm wafer fabrication platform to manufacture gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) devices for next-generation 5G wireless networks.

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Gallium nitride technology start-up Exagan of Grenoble and Toulouse, France (founded in 2014 with support from CEA-Leti and Soitec) has established the subsidiary Exagan Taiwan with a new sales and applications center in Taiwan – the firm’s first step in its global market deployment – to accelerate the development and use of fast, intelligent GaN power solutions in the region.

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Upcoming Events


> International Workshop on Nitride Semiconductors 2018 - IWN 2018
(November 11 - November 16, Kanazawa, Japan)

Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

Access to all our presentations