Secure payment on i-micronews Contact Yole Développement for I Micronews reports

RSS I-micronewsYole Dévelopement on TwitterYole Développement on Google +LinkedIn Yole pageSlideshare Yole Développement I-Micronews

Compound Semiconductors

ON Semiconductor driving energy efficient innovations, has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically intended for demanding automotive applications. The new AEC-Q101 automotive grade SiC diodes deliver the reliability and ruggedness needed by modern automotive applications, along with the numerous performance benefits synonymous with Wide Band Gap (WBG) technologies.

Read more ...

Exagan, a leading innovator of gallium nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, is accelerating the transition to greater power efficiency by launching its safe, powerful G-FET™ power transistors and G-DRIVE™ intelligent fast-switching solution, featuring an integrated driver and transistor in a single package. These GaN-based devices are easy to design into electronic products, paving the way for fast chargers that comply with the USB power delivery (PD) 3.0 type C standard while providing exceptional power performance and integration.

Read more ...

ROHM, a leading supplier of power semiconductors, and GaN Systems, the global leader in GaN power semiconductors, announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics. This strategic partnership leverages GaN Systems’ industry leading capabilities in power GaN transistors along with ROHM’s comprehensive footprint in semiconductor and considerable resources in the design and manufacture of electronic components. The companies have agreed to jointly develop form-, fit-, and function-compatible products using GaN semiconductor dies in both GaN Systems’ GaNPX packaging and ROHM’s traditional power semiconductor packaging.

Read more ...

ROHM, a leading supplier of power semiconductors, and GaN Systems, the global leader in GaN power semiconductors, announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics. This strategic partnership leverages GaN Systems’ industry leading capabilities in power GaN transistors along with ROHM’s comprehensive footprint in semiconductor and considerable resources in the design and manufacture of electronic components.

Read more ...

ROHM has recently announced plans to construct a new building at its Apollo plant in Chikugo, Japan, in order to expand production capacity to meet the rising demand for SiC power devices. The building will feature 3 stories aboveground encompassing a floor area of approximately 11,000m². Detailed designs are currently underway, with construction slated to begin in early 2019 and completed by the end of 2020.

Read more ...

3-5 Power Electronics GmbH (35PE) of Dresden, Germany – which was founded in 2015 and specializes in developing and producing gallium arsenide (GaAs) power semiconductors – is entering the market with a new technology for high-voltage and high-current power electronics applications. This follows the firm’s first production plant going into operation in the Dresden Technology Center on 11 April.

Read more ...

Upcoming Events

No events

Presentation

Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...
Status of the Sapphire Industry
Discover the presentation held by Eric Virey during the Sapphire Forum, the 6th of September...

Access to all our presentations