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Compound Semiconductors

Transphorm, a maker of hi-res, high voltage GaN semiconductors has confirmed that its GaN FETs are used in Corsair’s new AX1600i Power Supply Unit (PSU). Corsair supplies the gaming community with high-performance products used in custom PCs. The company’s latest product establishes a new class of AC-to-DC PSUs, as it is the first to use GaN and achieves 99 percent efficiency. Transphorm’s GaN increases the PSU’s power output by 6.5 percent in an 11 percent smaller package at the same temperature. The AX1600i uses Transphorm’s TPH3205WS 650V FETs in a bridgeless totem-pole power factor correction (PFC) — the topology that complements GaN’s performance and efficiency potential. With an increase of 6 percent within this topology, Corsair’s PSU efficiency now earns a better-than an 80 PLUS Titanium rating.

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DENSO, one of the world’s largest automotive suppliers, and FLOSFIA , a tech startup spun from Kyoto University, are partnering to develop a next-generation power semiconductor device expected to reduce the energy loss, cost, size and weight of inverters used in electrified vehicles (EVs). Through the joint development project, the two companies aim to improve the efficiency of EV power control units, a key to drive widespread EV use, and usher in a future of safer, more sustainable mobility. DENSO also joins FLOSFIA series C funding round, investing in critical technology for the future of electrified vehicles.

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Diamond Electric of Osaka, Japan (which makes ignition coils for automobiles, and designs and makes DC-DC convertors such as power conditioners, onboard chargers and onboard DC/DC converters) has developed a business-card-sized, thin isolated bidirectional DC-DC converter (IBDC).

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Last week saw an important piece of compound semiconductor industry news, in the form of an agreement between MACOM and STMicroelectronics. On February 6th, STMicroelectronics announced that it will manufacture Gallium Nitride (GaN)-on-silicon wafers for MACOM’s use across various radio frequency (RF) applications. The agreement also grants STMicroelectronics the right to manufacture and sell its own GaN-on-silicon products in RF markets outside of mobile phones, wireless base stations and related commercial telecom infrastructure applications.

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Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.

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Tokyo-based Mitsubishi Electric says that, among power semiconductor modules rated 1.7-6.5kV, its newly developed 6.5kV full silicon carbide (SiC) power semiconductor module is believed to offer record power density of 9.3kVA/cm3, which is 1.8x the 5.1kVA/cm3 of a conventional silicon insulated-gate bipolar transistor (IGBT) module (the new full-SiC power module will be compatible with Mitsubishi Electric’s HV100-series silicon IGBT modules).

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Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...
Status of the Sapphire Industry
Discover the presentation held by Eric Virey during the Sapphire Forum, the 6th of September...

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