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Compound Semiconductors

Expected to contribute to large-capacity communication and reduce power consumption of mobile base stationsTOKYO,- Mitsubishi Electric (TOKYO: 6503) announced its development of the world's first*ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a world-range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems. With a power efficiency** rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.

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The Compound Semiconductor Centre (CSC), IQE's joint venture with Cardiff University, and its partners (SPTS Technologies, Cardiff University and Swansea University) have announced the successful conclusion of an Innovate UK funded project - ‘High Efficiency Manufacturing of Vertical Cavity Surface Emitting Lasers (VCSELs)'

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Osram Opto Semiconductors, optoelectronics company and global number 1 in automotive lighting, announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (Light detection and ranging) systems. Osram, the in LiDAR lasers, and GaN Systems, the in gallium nitride power semiconductors, partnered to develop the breakthrough in laser driver technology that enables longer range and higher resolution LiDAR architectures.

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Silicon carbide (SiC), Gallium Arsenide (GaAs), Gallium Nitride (GaN), Indium Phosphide (InP)… Compound semiconductor materials currently represent a relatively small market compared to the enormous Si industry. However, while the growth potential of Si chips seems to be more conservative at the moment, the compound semiconductor industry enjoys a better outlook, with double digit growth potential in different market segments. At the beginning of the year 2019, it is a good time to review what happened in the year 2018 in the compound semiconductor industry and to share our views and questions for the New Year.

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Cree has announced that it signed a multi-year agreement to produce and supply its Wolfspeed SiC wafers to STMicroelectronics. The agreement governs the supply of a quarter billion dollars of Cree's advanced 150mm SiC bare and epitaxial wafers to STMicroelectronics during this period of extraordinary growth and demand for SiC power devices.

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“The way consumers charge their smart devices is about to drastically change,” asserts Antoine Bonnabel, Technology & Market Analyst and part of the Yole Développement’s Power & Wireless team. According to the Wireless Charging Technologies and Markets 2018 report, the wireless smartphone charging systems market is expected to surpass 1 Billion units per year by 2024.

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Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

Access to all our presentations