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Compound Semiconductors

At the IEEE’s 64th International Electron Devices Meeting (IEDM 2018) in San Francisco, CA, USA (1-5 December), micro/nanotechnology R&D center CEA-Leti of Grenoble, France has announced an extension of its 300mm silicon-based wafer line to open new R&D avenues for its industrial partners. The extension will allow new technological modules to be inserted in, or made compatible with, industrial flows up to completely pioneered technology routes that enable edge-AI (artificial intelligence) and high-performance computing (HPC) in memory, photonics, power electronics and other high-end applications.

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Singapore-based IGSS GaN Pte Ltd (IGaN) - which provides proprietary gallium nitride on silicon (GaN-on-Si) epitaxial wafer fabrication services for both power and radio frequency (RF) devices - and SilTerra Malaysia Sdn Bhd of Kulim Hi-Tech Park, Malaysia (an 8-inch wafer foundry offering fabrication and design support services in CMOS logic, high-voltage, mixed-signal, RF, BCD, power and MEMS technologies) have announced results of their recent technology transfer partnership, demonstrating a breakdown voltage of 650V for a D-Mode MISHEMT device using a 200mm GaN-on-Si wafer on a CMOS-compatible fabrication process.

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Last week the whole microelectronic community was in Munich. Therefore, impressive was the key word to describe the trade show, ELECTRONICA / SEMICON EUROPA this year. With 18 halls, numerous conferences and qualified audience including 73,451 trade visitors and 2,912 exhibitors, the show was the place to be in Europe. The whole microelectronic supply chain attended the show: from materials suppliers to devices markers, including equipment manufacturers, design houses, foundries and more, all players were there to meet their customers and partners. Number of business meetings taking place in Munich last week is probably remarkable and also confidential. 

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A Standard PFC CCM Boost Converter Using GaN Unleashes New Power Management Capabilities - Transphorm and Delta Electronics disclosed that the power supply unit (PSU) manufacturer’s newest innovation comes from practical use of Transphorm’s high-voltage (HV) GaN FETs. Delta’s latest 80Plus Platinum 800 Watt PSU now offers a backup lithium-ion battery. Should a data center lose power, the PSU’s battery will keep connected servers running for one minute—long enough to allow for a proper power down sequence. The use of GaN enabled Delta to reduce the power system size by ~25 percent, allowing for battery inclusion within a CRPS form factor.

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New BONDSCALE™ system provides a significant boost in wafer bond productivity; addresses logic transistor scaling and 3D integration challenges outlined in IRDS Roadmap. EV (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, introduced the all new BONDSCALE™ automated production fusion bonding system.

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Aixtron SE will deliver multiple AIX G5+ C MOCVD systems to InnoScience Technology (China) for the development of GaN power devices. All Aixtron cluster tools will feature a 5x200 mm configuration and will be shipped until Q2/2019.

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Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

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