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Compound Semiconductors

The announcement on 9th November 2018 that II-VI is buying Finisar is astonishing the industry. But, looking at recent trends, this move can also be seen as a logical evolution of the laser diode and datacom/telecom supply industries. Yole Développement (Yole) has covered these domains very closely in recent months, publishing several reports that are the background to this mega-merger, specifically our VCSELs - Technology, Industry and Market Trends and 3D Imaging & Sensing reports.

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Infineon Technologies AG acquires Siltectra, a start-up based in Dresden. The start-up has developed an innovative technology (Cold Split) to process crystal material efficiently and with minimal loss of material. Infineon will use the Cold Split technology to split silicon carbide (SiC) wafers, thus doubling the number of chips out of one wafer. A purchase price of 124 million Euros was agreed on with the venture capital investor MIG Fonds, the main shareholder.

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Driven by the development of data communications and the boom of Internet’s popularity, the sweet spot of Vertical Cavity Surface Emitting Lasers (VCSELs) has evolved. It has been, until recently, in short-distance data communication, but in the last few years, with the development of the latest generation of smartphones, VCSELs have made their way into high volume consumer applications. Automotive applications, such as Light Detection and Ranging (LiDAR) and gesture recognition, are expected to follow.

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EpiGaN, a European supplier of Gallium Nitride (GaN) technology solutions for telecom, power electronics, and sensor applications, has chosen an Aixtron G5+C tool to meet growing demand from their global customer base. EpiGaN, headquartered in Hasselt/Belgium, is a global supplier of GaN-on-Si and GaN-onSiC material product solutions for next-generation semiconductor devices. The company has selected Aixtron’s G5+C MOCVD system to boost its manufacturing capability of large-diameter GaN-on-Si and GaN-on-SiC epiwafers.

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Laser and optical parts maker II-VI said it would buy Apple supplier Finisar for about $3.2 billion, to grab a bigger slice of 5G investments and sell more sensors for iPhones and driverless cars. II-VI will pay Finisar shareholders $26 per share, in cash and stock, a premium of 37.7 percent to Finisar’s closing share price.

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Engineered materials firm II-VI of Saxonburg, PA, USA has announced a strategic collaboration with Japan’s Sumitomo Electric Device Innovations (SEDI), a subsidiary of Sumitomo Electric Industries, to establish a vertically integrated 150mm wafer fabrication platform to manufacture gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) devices for next-generation 5G wireless networks.

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Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

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