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Compound Semiconductors

Cree, announces that it signed a strategic long-term agreement to produce and supply its Wolfspeed® silicon carbide wafers to one of the world’s power device companies. The agreement, valued at more than $85 million, governs Cree’s supply of advanced 150 mm silicon carbide bare and epitaxial wafers during this period of extraordinary growth and demand for silicon carbide power devices.

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Mathematical advances that are driving the historic growth of machine learning (ML) in the cloud are now within reach of edge node developers with NXP's eIQ edge intelligence software environment and customizable, system-level solutions for focused applications.

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The market for infrared (IR) light sources is not new, but has evolved rapidly with the recent development of Solid-State Lighting (SSL). Initially developed for optical communication applications, LEDs and laser diodes started to be integrated into high-volume applications (like remote controls for IR LEDs or data centers for laser diodes…) in the 1980s/1990s. But it’s only recently, with the development of smartphones, that IR LEDs and laser diodes have come back to prominence. And now, the market is set for growth for the next 10 years as the automotive sector, among other emerging applications, is also implementing high-value functions using those light sources.

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Gallium nitride technology start-up Exagan of Grenoble and Toulouse, France (founded in 2014 with support from CEA-Leti and Soitec) has established the subsidiary Exagan Taiwan with a new sales and applications center in Taiwan – the firm’s first step in its global market deployment – to accelerate the development and use of fast, intelligent GaN power solutions in the region.

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Trymax Semiconductor Equipment BV (Trymax), today announced it has received multi-system orders for its NEO 2000 Series from a Chinese foundry. This news confirms the expansion of Trymax’s footprint in the region and reinforce the company’s leadership in compound semiconductor equipment. Shipping of the first systems will be in Q4 2018 and continue during Q1 2019.

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An article written by Rebecca Pool for CompoundSemiconductor. net - As more and more wide bandgap semiconductors reach electric vehicle markets, industry can expect rapid power module package development, reports Compound Semiconductor.

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Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

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