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Compound Semiconductors

With the release of the iPhone X, Apple has created a real and vast enthusiasm for GaAs based VCSELs for innovative 3D sensing function. Apple’s technical choice directly impacted the VCSEL industry with more than 3.3 billion units in 2023 with a 31% CAGR between 2017 and 2023. Similarly, the GaAs photonics market is expected to grow at a 37% CAGR from 2017 - 2023, reaching close to $150M by 2023, giving a new breath for GaAs substrates and epiwafer suppliers, after a quiet period due to the saturation of the mobile handset industry.

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Electric vehicles drive up market for silicon carbide power semiconductors, but cost remains an issue - popularity - An article written by Mark Lapedus for SEMICONDUCTOR ENGINEERING. The silicon carbide (SiC) power semiconductor market is experiencing a sudden surge in demand amid growth for electric vehicles and other systems. But the demand also is causing a tight supply of SiC-based devices in the market, prompting some vendors to add fab capacity in the midst of a tricky wafer-size transition. Some SiC device makers are transitioning from 4- to 6-inch wafers in the fab.

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STMicroelectronics, a global semiconductor player serving customers across the spectrum of electronics applications, and Leti, a research institute of CEA Tech, announced their cooperation to industrialize GaN (Gallium Nitride)-on-Silicon technologies for power switching devices. This power GaN-on-Si technology will enable ST to address high-efficiency, high-power applications, including automotive on-board chargers for hybrid and electric vehicles, wireless charging, and servers.

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CST Global has begun developing a buried heterostructure (BH), laser diode production capability on its commercial, MOCVD reactor. There is currently a supply shortage of this type of single-frequency device and a worldwide bottleneck in the ability to manufacture them. BH lasers suit many silicon photonics applications, including passive optical network (PON) and quantum sensing markets.

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Littelfuse, introduced its first 1700V SiC MOSFET, the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices. An important addition to the Littelfuse SiC MOSFET product offering, the LSIC1MO170E1000 is a powerful addition to the company’s 1200V SiC MOSFETs and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.

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The Power Electronics Cluster in ECPE has launched two new projects with Japanese organizations. The SiC-DCBreaker project is about electronic circuit breaker for DC networks based on SiC, the IsoGap project is about high temperature materials and reliability testing for wide bandgap devices.

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Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

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