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Compound Semiconductors

Riber, a French semiconductor equipment firm, is announcing the opening of its 100 percent owned subsidiary, Riber Semiconductor Technology Shanghai.
Located in the Baoshan district of Shanghai, this subsidiary will strengthen Riber's presence on the whole Chinese market and provide Chinese customers with commercial services, after sales services, in house and on-site maintenance solutions, completed with an extensive inventory of spares parts and accessories.
 
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GTAT opened its new state-of-the-art silicon carbide manufacturing plant with a ribbon-cutting ceremony on June 26, 2018 that included state and local officials who were on hand to commemorate the event. The facility, located in Hudson, New Hampshire, also includes the company’s new headquarters as well as its advanced research and development center.
 
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Navitas Semiconductor announced the opening of a new GaNFast Design Center, in Hangzhou, China, to enable pioneering partner customers to deliver leading edge converter designs that are 50% smaller, 50% lighter and can charge mobile applications up to 3x faster than old, slow silicon-based designs.
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2001 is the year the first SiC Shottky diode was commercialized. Much has changed since then, especially in the power electronics industry! SiC diodes and transistors have gradually convinced the market that they can replace silicon-based devices, even if they are more expensive and even if their integration means design changes.
Today, SiC MOSFETs have been commercially available for several years and are widely used in multiple applications. Yole Développement (Yole) expects a 29% CAGR over the next five years - in other words, a market that will quadruple in growth! This new report from Yole, Power SiC 2018: Materials, Devices and Applications, details what to expect in the next five years, and why such enormous growth is happening now.
 
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Yole Developpement has released the second edition of its 3D imaging & sensing report at an extremely interesting time for this technology’s use in smartphones.

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The wide-bandgap material gallium-nitride (GaN) has many advantages over silicon (Si) when it comes to applications in the area of power electronics. With a higher breakdown strength and lower on-resistance, GaN-based power devices can convert power more efficiently than most advanced Si-based devices. Apart from these assets, GaN-based power devices have a 10 – 100 times faster switching speed than Si-based devices, which makes them perform significantly better at the system level. With these properties, the first generation of GaN-based power devices have found applications, such as battery chargers for mobile phones and  electric cars, point-of-load power systems, industrial power supplies, DC/DC convertors for servers, and invertors for solar panel connections to the grid, to name a few.
 
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Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

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