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Compound Semiconductors

“The way consumers charge their smart devices is about to drastically change,” asserts Antoine Bonnabel, Technology & Market Analyst and part of the Yole Développement’s Power & Wireless team. According to the Wireless Charging Technologies and Markets 2018 report, the wireless smartphone charging systems market is expected to surpass 1 Billion units per year by 2024.

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Sanan Integrated Circuit (Sanan IC), a pure-play wafer foundry with its advanced compound semiconductor technology platform, announced that it has achieved full process qualification for commercial release of its 6-inch silicon carbide (SiC) technology to add to its foundry services portfolio.

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Twelve partners from northwestern Europe are creating an open access PIC (photonic integrated circuit) pilot line that it is claimed will drastically reduce costs and time for the pilot production of new products. This new facility is projected to be the incubator of a thousand new companies and thousands of jobs. The €14 million project (OIP4NWE) is supported by the European Regional Development Fund.

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Over a long period, industrial companies followed up at a distance the development of GaN-based solutions mainly managed by R&D institutes and laboratories. Today the context has changed. Under the updated of its annual report, Power GaN: Epitaxy, Devices, Applications and Technology Trends, Yole Développement (Yole) identified, a lot of power electronics & compound semiconductor companies including leading players such as Infineon Technologies, STMicroelectronics… strongly engaged in significant projects of development.

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In an invited talk at the 2018 European Materials Research Society (E-MRS) Fall Meeting at Warsaw University of Technology, Poland, Dr Atsushi Nishikawa, the co-founder & chief technology officer of IP licensing & technology engineering firm ALLOS Semiconductors GmbH of Dresden, Germany, showed data from customers that confirms not only outstanding wafer-level data but also what is claimed to be excellent dynamic on-resistance (Ron) and high-temperature performance for its gallium nitride on silicon (GaN-on-Si) epitaxial material. Most importantly, carbon-doping (known for causing bad dynamic on-resistance) is uniquely avoided.

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Qorvo of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has expanded its offering for 5G applications with what is claimed to be the first 28GHz gallium nitride (GaN) front-end module (FEM). The new single-channel FEM is said to reduce overall system costs for base-station equipment manufacturers as they expand into 5G.

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Presentation

GaN on silicon technology and market development
Discover the presentation held by Hong Lin at CS International, on April 10th 2018, in Bruss...
Status and Perspectives in Power Semiconductors
Discover the presentation held by Pierric Gueguen at PCIM Europe, in Nuremberg on May 2017.
GaN RF Industry: Landscape and Future Evolution
Discover the presentation held by Zhen Zong at CS International, in Brussels, Belgium, in Ma...

Access to all our presentations