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Power Electronics

Utilization of Micro-isolator to enable more compact inverters for electric and hybrid vehicle power inverters.

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of the R2A25110KSP intelligent power device of isolated IGBT driver for use in electric and hybrid vehicle power inverters. Incorporating newly developed Micro-Isolator isolation technology exclusive to Renesas Electronics, the R2A25110KSP makes it possible to build more highly reliable and compact systems for demanding automotive applications.
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MidAmerican Solar and SunPower Corp. (Nasdaq: SPWR) marked the start of major construction at the Antelope Valley Solar Projects – two projects co-located in Kern and Los Angeles counties in California – with a community celebration.
  •     579-Megawatt Antelope Valley Solar Projects Expected to Create Approximately 650 Jobs
  •     Construction began in January 2013 and is expected to be complete by year-end 2015.
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Fuji Electric’s Super Junction MOSFET device called SUPER J-MOS, is now available at 600V, exhibiting 70% reduction in On resistance.

Amidst heightening concerns over the global environment, initiatives to become more environmentally friendly in the fields of IT and new energy, among others, are focusing attention on power semiconductors with efficient power conversion. In this context, demand exists for MOSFETs (metal-oxide-semiconductor field-effect transistor)—the principal devices used for power conversion in semiconductors—that improve energy efficiency to a greater extent than in the past. In response, Fuji Electric is releasing the Super J-MOS series featuring its newly developed superjunction (SJ) structure, which achieves low on-resistance performance and significantly reduces energy loss.
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Ultra-low on-resistance and superior switching performance enable higher power density.

Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer and global supplier of a broad range of power semiconductors and power ICs, announced the release of AON6250, the flagship device in its new 150V AlphaMOS™ medium voltage portfolio. The AON6250 is well suited for a wide range of applications that are pushing the limits of efficiency such as primary side and secondary side switching in telecom and industrial DC/DC converters, secondary side synchronous rectification in DC/DC and AC/DC converters, as well as solar micro-inverters, and POL modules for telecom systems.
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Organic Photovoltaic (OPV) technology developer Solar Press is investigating the potential for flexible plastic based OPV modules to be used as a power source for remote, autonomous sensors within buildings – an ‘energy harvesting’ application.

  • Solar Press (UK) is investigating the potential for flexible plastic based OPV modules to be used as a power source for remote, autonomous sensors within buildings
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Yole Développement releases this week the GaN-on-Si Substrate Technology and Market for LED and Power Electronics report. Under this report, Yole Développement reviews the GaN-on-Si technology growth, challenges and solutions. Dr Hong Lin and Dr Eric Virey, Yole Développement’s analysts give an overview of GaN-on-Si epiwafer playground.
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GaN and SiC power device: market overview
Discover the presentation held by Milan Rosina, Principal Analyst in Power & Wireless Divisi...
SiC and GaN, which challenges remain in the road to success?
Discover the presentation held by Ana Villamor, Technology & market analyst in Power Electro...
How will battery pack requirements impact power electronic market ?
Discover the presentation held by Milan Rosina, Senior Technology & Market Analyst, Power El...

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