200V EPC2112 eGaN® HEMT with Monolithic Optimized Gate Driver

System Plus Consulting

Discover the unique enhancement-mode gallium-nitride (eGaN®) transistor monolithically integrated with a gate driver from EPC.


  • Detailed optical and SEM photos
  • Precise measurements
  • Material EDX analysis
  • Supply chain evaluation
  • Manufacturing cost analysis
  • Estimated selling price
  • Technology and cost comparisons between the monolithic HEMT from EPC and the solution offered by Navitas
  • Technology and cost comparison between 200V EPC’s devices: EPC2112 and EPC2010

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