The first GaN monolithic devices from Navitas for fast charging.
REVERSE COSTING WITH
- Detailed optical and SEM photos
- Precise measurements
- Materials EDX analysis
- Manufacturing process flow
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated sales price
- Comparison of 650V GaN HEMTs from Navitas, Transphorm and GaN Systems
Table of Contents
- Executive Summary
- Reverse Costing Methodology
- Package Analysis
- Package opening
- Package cross-section
- Die Delayering
- Die view and dimensions
- Die process
- Die 1
- Die 2
- Die Cross-Sections
- Power HEMT area
- Driver HEMT area
- Die Process Characteristic
- HEMT Die Front-End Process
- HEMT Die Fabrication Unit
- Final Test and Packaging Fabrication unit
- Summary of the Cost Analysis
- Yield Explanations and Hypotheses
- HEMT Wafer Cost
- NV6115 Component
- Die cost, packaging cost, final test cost
- Component cost
- NV6252 Component
- Larger die cost, small die cost
- Packaging cost, final test cost
- Component cost
- NV6115 Component Price
- NV6252 Component Price
- Comparison between Navitas, Transphorm and GaN Systems
Navitas is the pioneer of GaN System-on-Chip solutions, with its GaNFast™ technology in volume production, initially for markets such as fast chargers and travel adaptors, which are markets driving GaN transistor adoption. The NV6115 and NV6252 are 650V GaN-on-silicon High Electron Mobility Transistors (HEMTs) packaged in quad flat no-leads (QFN) packages and currently used in Aukey, RaVPower and Mu One chargers. The GaNFast technology allows switching frequencies up to 10MHz, reducing energy losses. Moreover, the high frequency enables the use of smaller, lighter passive components.
Navitas has integrated the driver part into the GaN component to obtain a monolithic solution. The NV6115 is a one die component and the NV6252 is two dies assembled in an asymmetrical Half-Bridge for Active Clamp Flyback application.
System Plus Consulting has deeply analyzed the technical design and cost of the NV6115 and NV6252 components. Supported by a full teardown of the components, this report reveals the innovative assets that enable Navitas to integrated them in fast chargers.
This report provides insights into the HEMT structure, the epitaxy, technical choices, design, processes, and supply chain positions. It also estimates the manufacturing cost of all the HEMTs and the packages and analyses the products’ selling prices.
Finally, the report proposes a functional comparison of the two components and compares them with similar devices from Transphorm and GaN Systems.
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