Deep analysis of the GAN063-650WSA, Nexperia’s first GaN product.
COMPLETE TEARDOWN WITH
- Bill of materials
- Assembly process
- Detailed optical and SEM photos
- Precise measurements
- Supply chain evaluation
- Manufacturing cost analysis
- Technology and cost comparisons with Transphorm’s TPH3206PS
Table of Content
- Executive Summary
- Market Overview
- Reverse Costing Methodology and Glossary
- Summary and Overview
- GaN HEMT
- Si MOSFET
- Fab Units
- HEMT Process Flow
- Si MOSFET Process Flow
- Component Packaging
- Economic Analysis and Yields
- GaN HEMT Cost
- HEMT wafer front-end cost and front-end cost per process step
- HEMT back-end 0 cost: Die probe test, thinning and dicing
- HEMT die cost
- Si MOSFET Cost
- MOSFET front-end cost
- MOSFET back-end 0 cost: Die probe test, thinning and dicing
- MOSFET die cost
- Packaging Cost
- Component Cost
- Back-end: Final test cost
- Component cost
- Technology and Cost Comparison Between Nexperia and Transphorm GaN Power Devices
Nexperia has released the GAN063-650WSA, its first GaN AEC-Q101 power device!
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is based on a cascode configuration of a GaN-on-silicon High Electron Mobility Transistor (HEMT) to handle high voltages and a standard low voltage silicon Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This drives high frequency and makes a normally-off transistor from the normally-on GaN HEMT. The silicon MOSFET is stacked on top of the GaN HEMT to connect the source contact of the bottom die to the drain contact of the upper die. The device is assembled in a TO247 package for easy integration into power electronic systems. It integrates a Direct-Copper-Bond (DCB) substrate and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency operation.
In this report, System Plus Consulting presents a deep teardown analysis of the GAN063-650WSA. Detailed optical and scanning electron microscope pictures and cross-sections with energy-dispersive X-ray analysis are included to reveal Nexperia’s technical choices from the device design up to the packaging.
The report provides an estimation of the production costs of the GaN HEMT, the silicon MOSFET and the package as well as the estimated price of the component.
Finally, the report includes a comparison with a GaN-on-silicon HEMT from Transphorm. This comparison highlights the differences in power device designs and manufacturing costs.
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