Panasonic PGA26C09DV 600V GaN HEMT

System Plus Consulting

Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascode structure



  • Detailed photos and identification
  • SEM analysis of epitaxy layers and transistor structure
  • TEM & EDX analysis of epitaxy layers
  • Manufacturing process flow
  • In-depth economics analysis
  • Manufacturing cost breakdown
  • Estimated sales price
  • Comparison with devices from Transphorm and GaN Systems

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