Exhaustive technology and cost comparisons of 31 Silicon IGBTs from Infineon, ON Semiconductor, STMicroelectronics, Mitsubishi, Rohm, Toshiba, Fuji Electric, Littelfuse, ABB, Microsemi, and the IGBT in StarPower’s module.
Complete teardown with:
- Detailed optical and SEM photos
- Precise measurements
- Manufacturing process flow of selected technologies
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated selling price
- Comparisons of technology design parameters and performance
- Comparisons of costs
Silicon (Si) devices represent the majority of the power electronics market. In 2019, the power semiconductor device market segment was worth US$17.5 billion, with a Compound Annual Growth Rate (CAGR) for 2019-2025 of 4.3% according to Yole Développement.
Silicon devices such as IGBTs are benefiting from mature infrastructure and processes. New device generations are coming to the market. In addition to performance improvements, Si IGBT costs will further be reduced thanks to a 12-inch Si wafer transition that will make the competition with WBG materials even tougher.
Si IGBT players offer different approaches for device design, depending on the targeted electrical performance and applications. Most of them have adopted the Field-Stop (FS) trench structure.
In this report, System Plus Consulting presents an overview of the state of the art of 31 Si IGBT transistors of eight voltage classes from 11 main IGBT market players. The report highlights differences in device design and manufacturing processes, and their impact on device size and production cost.
Detailed physical analysis is performed for 17 IGBTs. For devices previously analyzed by System Plus Consulting, please refer to the corresponding reports for the full technology analysis. Cost simulations are detailed for all 31 IGBTs. It includes their estimated manufacturing cost with breakdowns, and their selling price.
Finally, this report provides exhaustive physical, technological and manufacturing cost comparisons of the analyzed Si IGBTs, and a current density and die Ampere cost comparisons with SiC Transistors.
Table of Contents
Overview / Introduction
- Executive Summary, Reverse Costing Methodology, and Glossary
Technology and Market
- Infineon, ON Semiconductor, STMicroelectronics, Mitsubishi, Rohm, Toshiba, Fuji Electric, Littelfuse, ABB, Microsemi, StarPower
- 650V IGBTs
- Infineon, ON Semiconductor, STMicroelectronics, Mitsubishi, Rohm
- 750V IGBT
- 900V IGBT
- 1200V IGBT
- Infineon, ON Semiconductor, STMicroelectronics, Mitsubishi, Toshiba, Fuji Electric, Littlefuse
- 1700V IGBT
- Littelfuse, ABB
- 2500V IGBT
- 3000V IGBT
- 3600V IGBT
Technology and Physical Comparison
- Device Performance Comparisons: FOM, Current Density
- Device Design Comparisons
- Physical Parameters Trends
Manufacturing Process Flow
- Supply Chain of All Analyzed Manufacturers
- Wafer Fabrication Unit Hypotheses for all Analyzed Manufacturers
- Manufacturing Process Flow Schematics of Selected IGBT Processes
- Yield Explanations and Hypotheses
- For Each of the 31 IGBTs:
- Wafer cost
- Die cost
- Packaging cost, only for discrete packaging
- Component cost
- Component price
- Comparisons Include Wafer, Die Costs, Die Ampere Costs for Each Voltage Class
- SiC Transistor vs Si IGBT Die Ampere Cost Comparison
Related Reports & Monitors
Status of the Power Electronics Industry 2020
Market & Technology
Advanced Packaging Quarterly Market Monitor
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