Transphorm TPH3208PS 650V GaN HEMT

System Plus Consulting

A new 650V GaN HEMT from Transphorm with a simplified cascode structure and enhanced electrical characteristics



  • Detailed photos and identification
  • SEM analysis of epitaxy layers and transistor structure
  • EDX analysis of epitaxy layers
  • Manufacturing process flow
  • In-depth economic analysis
  • Manufacturing cost breakdown
  • Selling price estimation
  • Comparison with other Transphorm and GaN Systems devices

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