Discover the XM3 conduction-optimized module from Wolfspeed implementing the latest packaging and 1200V SiC die generations.
REVERSE COSTING WITH:
- Detailed optical and SEM photos
- Precise measurements
- Material EDX analysis
- Supply chain evaluation
- Manufacturing cost analysis
- Estimated selling price
- Comparisons with Cree’s all-SiC module CAS325M12HM2
- Comparison between second and third generation SiC MOSFET dies from Cree
- Comparison with Wolfspeed’s competitors’ 1200V SiC module solutions
Table of Content
- Executive Summary
- Market, Reverse Costing Methodology, and Glossary
- Cree/Wolfspeed Profile
- Module Product Portfolio, Supply Chain
- Overview of the Physical Analysis
- Package Analysis
- Package Opening
- Package Cross-Section
- NTC Temperature Sensor
- NTC Die View and Dimensions
- NTC Cross-Section
- SiC MOSFET Die
- MOSFET Die View, Dimensions and Process
- MOSFET Die Cross-Section
- SiC MOSFET Front-End Process and Fabrication Unit
- Packaging Process Flow, Final Test and Packaging Fabrication unit
- Overview of the Cost Analysis, Yield Explanations and Hypotheses
- SiC MOSFET
- MOSFET Front-End Cost
- MOSFET Wafer Cost by Process Step
- MOSFET Die Probe Test & Dicing
- MOSFET Die Cost
- Packaging Cost
- Module BOM Cost
- Package Assembly Cost
- Complete Module Cost
- Test Cost and Final Module Cost
Selling Price Analysis
- Definition of Prices
- Estimation of Selling Price
- Comparison with Wolfspeed 1200V SiC Module CAS325M12HM2
- Cree 1200V C2M vs C3M SiC MOSFETs
- Comparison with Rohm and Infineon 1200V SiC Modules
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 29% from 2018-2024.
Taking advantage of this growing market, SiC-based device penetration is expanding in different applications, raising competitiveness of both die and SiC module solutions. Module solutions are seeking not only loss reduction and improved efficiency but also improved packaging.
Launched in 2019 and housed in XM3 optimized packaging, the CAB450M12XM3 represents the newest generation of all-SiC modules from Wolfspeed. For reference, the first generation was launched in 2016 and was analyzed in our report “SP19416 – Wolfspeed CAS325M12HM2 All-SiC 1200V Power Module”.
With half the weight and volume of a standard 62mm module, the XM3 SiC power module enables the highest power density in the SiC modules platform offered by Wolfspeed.
The module implements conduction-optimized third-generation SiC MOSFETs in a 1200V half-bridge configuration, with a current rating of 450A. The superior thermal characteristics of SiC devices, along with the XM3’s optimized SiC packaging and materials, enable this module to operate at 175°C. This is a key advantage for many industrial, aerospace, and automotive applications.
This report deeply analyzes the CAB450M12XM3 module. Supported by a full teardown of the module’s components and housing, this report reveals Cree/Wolfspeed’s innovative assets that enable it to assemble its module in its newest generation XM3 SiC packaging.
This report includes an estimated manufacturing cost of all the module’s components and a selling price analysis. It proposes a comparison with the previous generation all-SiC module CAS325M12HM2 from the same manufacturer. Also, we include a comparison between the second generation C2M and third generation C3M SiC MOSFET dies from Cree used in these two modules.
Moreover, the report includes a comparison with Wolfspeed/Cree’s competitors’ 1200V SiC Modules solutions to highlight differences in the electrical parameters, technology, packaging, die characteristics, and production costs.
Related Reports & Monitors
GaN-on-Si HEMT vs Superjunction MOSFET Comparison 2019
Reverse Costing - Structural, Process & Cost Report
Power GaN 2019: Epitaxy, Devices, Applications & Technology Trends
Market & Technology
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