Latest GS66508T power transistor of GaN Systems packaged with a top-side cooling.
GaN Systems offers for GS66508T (650V, 30A) a top-side cooling using AT&S ECP® embedded die packaging process. Compared to the bottom-side cooling approach, this new power packaging process allows to reduce the package footprint by 60% for a cost 40% cheaper!
The GS66508T is packaged is an innovative embedded die package developed by AT&S (ECP® process). This package has no wire bonding to reduce the inductance and a design to increase the heat management using the two sides of the die.
The new position of the die in the package allows to enhance the thermal dissipation. Moreover a simplification of the process reduces the time and the cost of manufacturing.
The report includes a complete physical analysis of the packaging process, with details on all technical choices regarding process, equipment and materials.
The report also features a comparison with GaNpx bottom-side cooled packaging and with AT&S first generation ECP® process in order to understand the different technology choices made.
The GaN-on-Silicon die analysis is not included, but is available in the previous GaN Systems published report: GS66508P(bottom-side cooled).
ANALYSIS PERFORMED WITH OUR COSTING TOOLS 3D PACKAGE COSIM+
Overview / Introduction
GaNpx – ECP® technologyAdaptation of AT&S ECP® package for high voltage powerComparison with GaNpx Bottom-Side Cooling
Manufacturing Process Flow
Global OverviewGaNpx Packaging Fabrication UnitGaNpx Packaging Process Flow
Main steps of economic analysisGaNpx package
Cost Comparison with bottom-side cooling
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