Extremely fast switching GaN-on-silicon HEMT for guidance in 3D sensing for augmented reality systems and autonomous vehicles
The EPC2040 is a 15V eGaN FET© from Efficient Power Conversion for high frequency pulsed applications like LiDAR (Light Distancing and Ranging). The ability of EPC2040 to switch ten times faster than MOSFETs increases the resolution, response time and accuracy of capturing three dimensional LIDAR images.
The EPC2040 is a GaN-on-silicon HEMT (High Electron Mobility Transistor) designed by EPC, manufactured by Episil and supplied in passivated bare die form with solder balls. The wafer level package is well suited for high frequency functions with low inductive parasitic levels. WLCSP (Wafer Level Chip Scale Packaging) produces a small die, at just 0.85 mm x 1.20 mm, at low packaging cost.
The report presents deep technology analysis of the packaging and components with images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with the first EPC GaN HEMT.
Overview / Introduction
> EPC Profile
> Episil Profile
> Package - Package Views & Dimensions - Package Cross-Section - Pad Cross-Section> GaN transistor - Die View, Dimensions & Marking - Edge of the Die - Metal Layers - Gate Cross-Section - Source Cross-Section - Drain Cross-Section - Substrate and Epitaxy Layers> GaN Transistor Characteristics
Manufacturing Process Flow
> Global Overview> GaN Transistor Front end Unit> Transistor Process Flow> Packaging Process Flow
> Synthesis of the cost analysis> Main steps of economic analysis> Yields Hypotheses> Epitaxy Cost> Front-End Cost> Wafer Cost> Wafer Cost per process steps> Probe and Dicing Cost> Packaging Cost> Final Test Cost> EPC2040 Component Cost
Comparison of 3 EPC transistors
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Supply Chain Evaluation
Manufacturing Cost Analysis
Estimated Sales Price
Comparison with EPC’s EPC1010 and EPC 2010 transistors